Examples of 'algan' in a sentence
Meaning of "algan"
Algan (verb): A term often used in the field of biology to describe the process of algae production or growth
How to use "algan" in a sentence
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algan
The toxicology of AlGaN has not been fully investigated.
Method of manufacturing a light emitting diode comprising a layer of AlGaN heterogeneous.
Gate is formed on the AlGaN layer plumb with the implanted area.
This effect is opposite to that observed in the HEMT in AlGaN barrier.
The dopants were concentrated in the AlGaN layer or diffused when the annealing was performed.
At the same time she took lessons from Ayla Algan in drama.
Resume of Yann Algan from his personal website.
He began his acting career with Ayla Algan.
With AlGaN and AlGaInN, even shorter wavelengths are achievable.
However, the intermediate is usually a layer of AiN or AlGaN.
The AlGaN dust is an irritant to skin, eyes and lungs.
This study was conducted on AlGaN layers and on GaN / AlN quantum dots.
An AlGaN layer is formed by epitaxy on the second GaN layer ; and.
Finally, the subject of AlGaN nanowire growth is briefly introduced.
A first set of results reports on the growth of nitride thin layers, including AlGaN alloys.
See also
According to an alternative, the AlGaN layer can be completely devoid of Ga.
The thermal barrier layer 4 and the additional thermal barrier layer 5 each comprise AlGaN.
AlGaN can be doped n-type and create much higher conductivity than AiN.
Later, he met theater actress Ayla Algan and studied acting.
In their book, Algan and Cahuc show how trust and civic feeling are connected.
Other parties will have until Thursday to submit their petitions, Algan said.
And Jerg Algan embarked upon the final phase of his journey, the starmasters ' gambit.
Layer 6 can for example be a layer of AlGaN i . e.
AlGaN / GaN heterostructures are grown on a silicon substrate by MOCVD at CHREA.
In the example illustrated, the barrier layer 17 is formed in AlGaN.
Lemongrass oil, Algan and the wetting agents Pulse and Tween did not control botrytis.
The apparatus of claim 13, wherein said ternary nitride alloy is AlGaN.
An n-doped AlGaN layer, formed on the n-doped GaN layer.
Finally, this EBL layer must be p-doped, which requires optimised doping of AlGaN.
The transistor 1 additionally comprises an AlGaN layer 17 positioned on the layer 16.
P cladding layer 108 is formed of Mg doped AlGaN.
The transistor 1 further comprises a layer of AlGaN 17 arranged on the layer 16.
This electron blocking layer is usually made from AlGaN with 8 to 20 % of aluminium.
Cavity is formed through the layer of AlGaN 17 and through the layer of GaN 16.
