Examples of 'bipolar transistors' in a sentence
Meaning of "bipolar transistors"
Bipolar transistors are electronic devices used in circuits to amplify or switch electronic signals. They consist of three layers of semiconductor material and can be either NPN (negative-positive-negative) or PNP (positive-negative-positive) type. Bipolar transistors allow current to flow in both directions and are commonly used in various applications, such as amplifiers, oscillators, and digital logic circuits
How to use "bipolar transistors" in a sentence
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bipolar transistors
Bipolar transistors and thyristors are currently developed.
There no longer exist parasitic bipolar transistors.
Regarding bipolar transistors few studies have been conducted.
Examples are nMOS field effect or npn bipolar transistors.
Bipolar transistors are current amplifiers.
Each electronic switch includes a plurality of bipolar transistors.
Bipolar transistors may in particular come into question.
Static characteristics of bipolar transistors.
Bipolar transistors are often used for their dynamic performance.
The configurations described above only contain bipolar transistors.
A circuit with bipolar transistors is complicated to design and therefore expensive.
Statistical modelling of bipolar transistors.
Instead of FETs bipolar transistors may alternatively be used as amplifier stages.
Such sounds dominate especially in amplifiers built on bipolar transistors.
It is also possible to use bipolar transistors on substrate of AsGa or InP type.
See also
The embodiments described thus far use bipolar transistors.
It is beneficial to note that bipolar transistors are subject to a risk of thermal runaway.
This cell is composed of two differential pairs of bipolar transistors.
Controlling the second bipolar transistors also makes it possible to vary damping.
The said means of amplification are advantageously composed of bipolar transistors.
Bipolar transistors are so named because they conduct by using both majority and minority carriers.
Numerous techniques have been devised for fabricating bipolar transistors.
The said bipolar transistors and the said diodes are preferably broad band components.
The present invention relates to an integrated switch formed of bipolar transistors.
They are named bipolar transistors because their operation involves both electrons and holes.
The invention particularly relates to the production of hyperfrequency bipolar transistors.
The switches may be bipolar transistors or MOS type transistors.
Other circuits could be used employing JFETs or bipolar transistors etc.
Then the field went to bipolar transistors manufactured in CMOS technology.
This has been exploited for fabricating high quality heterojunction bipolar transistors.
Noise performance improvement by bipolar transistors in CMOS operational amplifiers.
The drawings that have been described here above use bipolar transistors.
The switches are for example bipolar transistors or MOS type transistors.
Attenuation cell comprising first and second differential pairs of bipolar transistors.
The transistors shown are bipolar transistors but they may also be MOS transistors.
The invention is not restricted to the case where bipolar transistors are used.
Matrix of bipolar transistors is thus obtained which offers the following advantages,.
Minority carriers play an important role in bipolar transistors and solar cells.
Bipolar transistors are shown, but this design would also be realizable with FETs or valves.
The signal processing circuit may comprise one or more bipolar transistors.
Insulated gate bipolar transistors LGBT.
Another object of the present invention is to obtain the smallest possible bipolar transistors.
Other types of transistors, such as bipolar transistors may also be envisaged.
The invention is applicable more advantageously if the transistors mentioned above are bipolar transistors.
Another object of the present invention is to obtain bipolar transistors with reduced access resistances.
It was changed transformer and ribbon was converted to active electronics with classic bipolar transistors.
Further, only the forming of bipolar transistors has been described herein.
This was achieved in the example under consideration by sizing the bipolar transistors accordingly.
MOS or bipolar transistors may be formed from properly-doped silicon nanofibers.
The present invention relates generally to the manufacturing of bipolar transistors in integrated circuits.
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