Examples of 'carrier concentration' in a sentence
Meaning of "carrier concentration"
Carrier concentration refers to the quantity of charge carriers, such as electrons or holes, within a material. It is commonly used in the context of semiconductor physics and electronics to describe the number of mobile charge carriers present in a material
How to use "carrier concentration" in a sentence
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carrier concentration
Ni is the intrinsic carrier concentration of the base material.
This impurity potential induces an inhomogeneous carrier concentration.
The carrier concentration is modulated by temperature.
Where ni is the intrinsic carrier concentration.
The carrier concentration can also be a function of temperature.
The gate charge is modulated by change in the carrier concentration.
So the carrier concentration in intrinsic semiconductor is.
The upper limit depends on the carrier concentration of the developer.
This is because the resistivity is inversely proportional to the carrier concentration.
This creates a carrier concentration gradient within the semiconductor.
The input radiation in undergoing amplification reduces the free carrier concentration and hence the gain.
The carrier concentration near the active cell is enhanced by such an enhancement layer.
Most important is the material 's charge carrier concentration.
Intrinsic carrier concentration.
A photodetector is disclosed in which non-equilibrium effects are employed to reduce the carrier concentration.
See also
Changes in carrier concentration were also found to be reflected in measured Raman spectra.
Auger lifetime is a function of the carrier concentration and is given by,.
The carrier concentration profile at equilibrium is shown in figure A with blue and red lines.
This introduces a non-linear voltage variation of the carrier concentration in the conduction channels.
Ni is the intrinsic carrier concentration given for silicon in the Silicon Material Parameters page.
For p-type samples Hall effect measurements were used to determine carrier concentration.
Minimizing the equilibrium carrier concentration is achieved by increasing the doping ;.
The calculation of N TDD performed at step F 2 requires knowing the value of charge carrier concentration p 0.
However, initial carrier concentration values were obtained for the current process.
Based on Hall measurements, these films have a low carrier concentration and relatively high mobility.
The charge carrier concentration may then be deduced using the following equation for a degenerate semiconductor,.
The influence of stripping agent, anion, pH in feed phase, and carrier concentration were investigated.
Carrier Concentration g / l.
By " doping " is meant changing the carrier concentration and / or type of the semiconductor material.
Carrier concentration n0 and p0.
Excess electrons increase the electron carrier concentration ( n0 ) of the semiconductor, making it n-type.
As a result, the total ( electron + hole ) charge carrier concentration at the interfaz 14AB is reduced.
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