Examples of 'conductivity type' in a sentence
Meaning of "conductivity type"
conductivity type: This phrase is typically used in the context of discussing electrical or thermal conductivity. It refers to the classification or categorization of a material based on its ability to conduct electricity or heat. Different materials exhibit different conductivity types, including conductors, insulators, and semiconductors.
How to use "conductivity type" in a sentence
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conductivity type
The semiconductor material is of a first conductivity type.
Opposite conductivity type.
These two contacts have the same conductivity type.
The first conductivity type is opposite the second conductivity type.
The semiconductor material of first conductivity type may be diamond.
The conductivity type may also result from the addition of a dopant.
The transistor is formed in an epitaxial layer of the second conductivity type.
The conductivity type may even be inverted on passing through the interface.
The first and second transistor are of a same first conductivity type.
The specimens were examined for conductivity type by measuring the thermoelectromotive force.
The conductive layers are electrically connected to the semiconductive region of a first conductivity type.
These lines are deep diffusions with a conductivity type opposite to that of the substrate.
The second conductivity type is an opposite conductivity type from the first conductivity type.
The alignment patterns and the second region are doped of the second conductivity type.
Second area of second conductivity type arranged to be in contact with the conducting bump.
See also
The second amplification stage comprises third and fourth MOS transistors of a second conductivity type.
The observed apparent conductivity type results from the deposition method used.
The electrode zone 9 is of a first conductivity type.
A well region of a second conductivity type silicon carbide is formed in the silicon carbide layer.
In one embodiment, the output transistors are of an opposite conductivity type.
The first material has a first conductivity type for majority carriers and minority carriers.
This component is fabricated from a semiconductor substrate 1 of a first conductivity type.
The second opposite conductivity type is the p-type.
The conductivity type could be opposite to that of the layer 2.
Implanting a dopant of the second conductivity type in the substrate ;.
Second pattern 2 b is made of a second phase-change material of a second conductivity type.
An area of the second conductivity type formed in the pocket ;.
The phase-change material is doped with a first conductivity type.
An area of a second conductivity type formed within said pocket ;.
Preferably, pattern 2 is formed in a single deposition step with a first conductivity type.
A thermoelement of a second conductivity type opposite to the first ; and.
The integrated circuit is formed on a semiconductor substrate 1 of a first given conductivity type.
A layer of the second conductivity type at a bottom surface of the well ;.
This document describes a transistor formed on a semiconductor substrate of the n+ conductivity type.
Second pattern 2 b of a second conductivity type may be formed by ion implantation.
First pattern 2 a is made of a first phase-change material of a first conductivity type.
A dopant of a second conductivity type is then implanted at the surface of layer 20.
A voltage regulator circuit composed of transistors of a single conductivity type and resistors, comprising,.
The area of first conductivity type is aligned with areas 7 of second conductivity type.
Depositing a polysilicon layer doped of a second conductivity type and an insulating layer ;.
A well of the first conductivity type contacting the substrate and surrounding the ring ;.
Contact 5 couples bias voltage generator 3 with an area of first conductivity type of the substrate.
A first region of a second conductivity type formed on the rear surface side ;.
In this case, the two ion implantations form regions of the same conductivity type.
A ninth region of the first conductivity type formed in the eighth region ;.
Accordingly, such region of the patterned substrate surface will finally have the second conductivity type.
A third region of the second conductivity type beneath said second region ;.
Furthermore the second semiconductor contact layer and the mini-mesa structure are of opposite conductivity type.
A second region of the first conductivity type formed in the first well ;.
According to an embodiment of the invention, the first conductivity type is N.
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