Examples of 'gallium nitride' in a sentence

Meaning of "gallium nitride"

Gallium nitride is a compound made up of the elements gallium and nitrogen. It is a wide bandgap semiconductor material with various applications in electronics and optoelectronics. Gallium nitride is known for its ability to emit bright light efficiently, making it suitable for use in LEDs and lasers. It also has properties that make it suitable for high-power and high-frequency electronic devices, such as transistors and amplifiers
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  • A semiconductor commonly used in blue light-emitting diodes.

How to use "gallium nitride" in a sentence

Basic
Advanced
gallium nitride
But advanced gallium nitride in enemy hands.
The structure can be a structure of gallium nitride.
Epitaxy of gallium nitride films on silicon substrates.
The contact part can be of gallium nitride.
The gallium nitride layer may be formed by heteroepitaxy.
Method for producing a gallium nitride epitaxial layer.
Gallium nitride switches are high speed switching devices.
Low energy electron beam irradiation of gallium nitride.
Gallium nitride nanowires could have bright future in LEDs.
Process for producing an epitaxial layer of gallium nitride.
Gallium nitride is a good candidate for forming an optoelectronic device.
Architecture of drive unit employing gallium nitride switches.
Gallium nitride is easily separated from the reaction medium.
We started with ordinary gallium nitride.
Here bulk gallium nitride dopped with magnesium was used as a substrate.

See also

The devices are based on a single gallium nitride nanowire.
The gallium nitride deposition is generally carried out in two steps.
The examples of smooth layers relate in no case to gallium nitride.
Characterization of homoepitaxial gallium nitride grown by hydride vapor phase epitaxy.
It relates in particular to optoelectronic components formed on such gallium nitride layers.
Gallium nitride thin film bulk acoustic resonators for microwave frequencies.
Chapter two deals with the material indium gallium nitride.
Freestanding gallium nitride substrate is produced according to the method of the invention.
Such applications are in the course of development on silicon carbide or gallium nitride.
Gallium nitride has indeed the particularity of allowing an emission in blue or ultraviolet.
Fabrication and characterization of plasmonic nanogratings on indium gallium nitride quantum wells.
Gallium nitride switches have lower losses than equivalent silicon devices.
Such a process makes it possible to obtain gallium nitride layers of excellent quality.
The key to success is transistors made of the semiconductor material gallium nitride.
Highly efficient gallium nitride based light emitting diodes vía surface roughening.
The current generation of ultraviolet lasers is based on a material called gallium nitride.
The invention also concerns the gallium nitride layers obtained by said method.
Vacancy type lattice defects were analyzed for electron dosed gallium nitride.
Thus the light emitting component of gallium nitride compound semiconductor can be made.
The problem is therefore identical for components produced on a thin film of gallium nitride.
The thin film of gallium nitride is joined onto a substrate made of high resistivity silicon.
Sapphire is another material that is known for permitting good epitaxy of gallium nitride.
The gallium nitride structures obtained by such known heteroepitaxy procedures are of low crystalline quality.
The first and second semiconductor layers may be formed from gallium nitride.
The wide band gap material gallium nitride is prized for emitting blue light in LEDs.
It also relates to optoelectronic and electronic components made from these gallium nitride films.
NRC is studying the properties of gallium nitride for electronic applications.
The first and second transistors of the second bidirectional switch are gallium nitride HEMTs.
The first step of gallium nitride growth is carried out by MOVPE.
Half of this budget was allocated for further study of gallium nitride and its applications.
The first step of gallium nitride growth is carried out by MBE.
They were trying to get information on Gallium Nitride.
ICP processing of gallium nitride and aluminium gallium nitride for laser structures.
But a mismatch between the structures of sapphire and gallium nitride created too many defects.
Gallium Nitride material features are reviewed as well as substratessuited for GaN based devices.

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Examples of using Gallium
We are going to give him a gallium scan just to be safe
Gallium has a very low melting point
Pour the gallium into the gum
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Examples of using Nitride
Silicon nitride has many orthopedic applications
But advanced gallium nitride in enemy hands
Boron nitride has potential use in nanotechnology
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