Examples of 'gate dielectric' in a sentence
Meaning of "gate dielectric"
gate dielectric: Refers to the insulating material used in the structure of a transistor, particularly in semiconductor devices, to control the flow of electrical current between the gate electrode and the channel
How to use "gate dielectric" in a sentence
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gate dielectric
No significant gate dielectric encroachment occurs.
The gate is separated from the channel by a gate dielectric.
It suffices that the gate dielectric film is of high withstanding voltage.
This can allow to form a good quality gate dielectric.
The gate and the gate dielectric zone can be separated by a modulable empty space.
D silica has potential applications in electronics as the thinnest gate dielectric.
Replacing the silicon dioxide gate dielectric with another material adds complexity to the manufacturing process.
Replacement of the bogus gate by a definitive gate, insulated by a gate dielectric layer.
Forming a first gate dielectric over a substrate;.
Gate dielectric layer in contact with the channel ;.
An OFET substrate or a gate dielectric surface.
Gate dielectric layer in contact with said channel, and.
Enhancement mode III-nitride transistors with single gate dielectric structure.
The gate dielectric is located directly beneath the poly-Si line.
Depending on the embodiments employed, the gate dielectric can be eliminated or kept.
See also
Forming a second gate dielectric over the etched first layer and on sidewalls of the slot ;.
Furthermore, transistors having a relatively high-permittivity gate dielectric may preferably be produced.
The gate dielectric physical thickness is 3 nm ;.
The conductive solution 10 is in contact with the gate dielectric 9.
Ox, capacitance of the gate dielectric of the modeled transistor ;.
Gate electrode 5 is separated from semiconductor material film 4 by a gate dielectric 6.
The gate dielectric 10 is arranged above the channel.
The channel 3 is covered with a gate dielectric 6 on which the gate 7 is deposited.
The gate dielectric space 34 consists of an insulative layer of silicon oxide.
The method then comprises a step 20 for making the gate dielectric 9.
Then, a gate is formed by deposition of a gate dielectric and a gate material in the cavity 229.
The gate dielectric can be formed for example by thermal oxidation of the substrate 100.
Gate electrode 1 is separated from semiconductor film 6 by a gate dielectric material ( not shown ).
Gate dielectric 13 can be a silicon oxide or a high-k material.
Gate electrode 9 is separated from semi-conducting material film 4 by gate dielectric material 5.
A gate dielectric 10 as well as a gate 12 are made on the transistor channel.
One of the remaining sections of the dielectric layer forms the gate dielectric 112.
The method according to claim 3, wherein the gate dielectric material is a High-k type material.
Gate dielectric 13 left free is in turn eliminated to allow access to active area 10.
As a variant, the lateral spacer 18 can be formed after deposition of the gate dielectric 26.
The gate dielectric 21 can have a thickness of several nanometers, for example between 2 and 6 nm.
The capacitance 202, called C ox, represents the capacitance formed by the gate dielectric of the transistor.
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