Examples of 'gate electrode' in a sentence
Meaning of "gate electrode"
gate electrode ~ In the context of electronics and semiconductors, a gate electrode refers to a metal or polysilicon component in a field-effect transistor (FET). It is responsible for controlling the flow of electrical current through the transistor by either allowing or blocking the movement of charged carriers
How to use "gate electrode" in a sentence
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gate electrode
A gate electrode is formed along the fin.
The silicon wafer serves as the gate electrode.
A gate electrode is fabricated on a semiconductor on insulator substrate.
A gate material is deposited to form the gate electrode.
Gate electrode positioned on the gate insulator.
And polysilicon can be used as the gate electrode.
A control gate electrode is deposited and further oxide covers it.
The same can be the case for the gate electrode.
Gate electrode in contact with the third semiconducting region.
This line is offset on the narrowest side of the gate electrode.
Forming a gate electrode made from electrically conducting material.
This limits the possibility of reduction of the gate electrode dimensions.
The six gate electrode tracks are oriented parallel to each other.
It is therefore perfectly suited to be coupled with the gate electrode of the transistor.
Each gate electrode is separated from the conduction channel by a gate insulator.
See also
The voltage applied to the gate electrode tries to charge the capacitor.
The gate electrode is connected to a second conductor common to all precharge transistors.
Depositing a metallization through the window in order to form the gate electrode.
The gate electrode of a transistor can be achieved by the method described above.
The oscillation can be controlled by means of an additional electrode called a gate electrode.
This insulated metal gate electrode can be thought of as one plate of a capacitor.
This surface channel is formed and modulated by a potential applied to the gate electrode.
The gate electrode may be formed by conventional deposition and patterning techniques.
This permits a capacitive voltage boost to the gate electrode as will be described hereinafter.
The gate electrode material is preferably polysilicon formed from amorphous silicon.
Deposition of an electrically conducting material between the two delineation patterns to form a gate electrode.
Forming a gate electrode on the gate insulator at the vertical of the semiconductor element.
The semiconductor material pattern is covered by a gate electrode which faces the dividing pattern.
Their gate electrode is connected to a drain channel formed between two layers of doped material.
The source and drain contacts and gate electrode contact are formed at the same time.
The gate contact area is also preferably perfectly aligned with respect to the gate electrode.
Finally an Au gate electrode was described by shadow mask evaporation.
This terminator achieves a constant resistance using the higher control voltage on the gate electrode.
Finally an Au gate electrode was deposited by shadow mask evaporation.
This enables a drop in leak current on the gate electrode of the JFET transistor.
The gate electrode in a field emitting display sits in a strong accelerating DC field.
In an embodiment, the gate electrode includes polysilicon.
A gate electrode which may be of metal, is provided on a substrate.
Here, the solution is used as the gate electrode.
The gate electrode is typically Ι μ wide.
The implantation mask used comprises gate electrode 5.
The shape of gate electrode 9 is preserved.
The second electrode 4 forms the gate electrode.
Forming of a gate electrode on the second active area ;.
The implantation step is performed after formation of gate electrode 5.
A gate electrode over a substrate having an insulating surface;.
This deposit in fact constitutes the gate electrode 6 of the transistor.
A gate electrode formed on the substrate;.
One of the electrostatic controls is variable in amplitude, the gate electrode 1.
An insulated front gate electrode overlying the intermediate region ;.
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