Examples of 'gate material' in a sentence
Meaning of "gate material"
Gate material refers to the substance or material used in the construction or fabrication of a gate. It can vary depending on the desired strength, durability, and aesthetic appeal of the gate, and may include materials such as wood, metal, plastic, or composite materials
How to use "gate material" in a sentence
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gate material
A more refractory gate material was needed.
A gate material is deposited to form the gate electrode.
Annealing for the formation of the gate material.
The gate material may be for example TiN or aluminium or chromium.
Replace said sacrificial material by at least another gate material.
Deposition of said second gate material so as to fill said given space.
The substrate is covered by a layer of dielectric material and a gate material.
The use of an additional part of the gate material as resistance is also possible.
Replacing said sacrificial material by at least one other gate material.
As discussed above, the gate material is preferably molybdenum.
This removal may be carried out by selective etching of the gate material.
The filling of depression 7 by the gate material has disturbing effects.
The two gates are therefore here formed from a same layer of gate material.
Forming a first layer of gate material over the first gate dielectric ;.
Non-volatile programmable and electrically erasable memory with a single layer of gate material.
See also
Another dielectrical layer is provided between the gate material and said charge storage zone.
The gate material forms gate electrode 3.
Forming a second layer of the gate material over the second gate dielectric ;.
Gate material 42 for example polysilicon or TiN is then deposited.
In the absence of these spacers, gate material 6 is totally eliminated from the contact area.
This block 111 is formed by a portion of the etched gate material layer.
Step of removing the gate material projecting above the aperture 45 can then be made.
In this particular embodiment, the first plugs are eliminated before gate material 23 is formed.
Typically, gate material 14 is deposited by chemical vapor deposition.
Then, a gate is formed by deposition of a gate dielectric and a gate material in the cavity 229.
As in the previous embodiments, gate material 6 is patterned by means of etching mask 8.
Gate material 23 then presents a thickness substantially equal to that of first insulating material layer 18.
The next step is to deposit a gate material 142 for example such as polysilicon.
The gate material 31 is in contact with the gate insulation 32.
And then partial removal of the gate material 129 is carried out by anisotropic etching.
This additional contact area 31 is not connected to gate material 23.
Filling the opening with a gate material such as, for example, polysilicon, or a refractory metal.
To this end, a deposition of dielectric gate material 131 is firstly carried out.
Step of removal of the gate material extending above opening 145 may then be accomplished.
An example of a particularly transparent gate material is zinc-doped indium oxide ( ITO ).
For both p and n transistors, the gate material 84 is heavily doped n-type with phosphorous.
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