Examples of 'gate oxide' in a sentence
Meaning of "gate oxide"
Gate oxide is a layer of oxide material used in semiconductor devices to electrically isolate different components
How to use "gate oxide" in a sentence
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gate oxide
The gate oxide will be readily fabricated.
Electrical characterization of ultra thin gate oxide.
Is the gate oxide capacitance per unit area.
Grow the gate oxide.
The gate oxide becomes the ions sensitive membrane.
One solution to this problem involves nitriding the gate oxide layer.
The thickness of a gate oxide region of a transistor must be controlled within exacting tolerances.
It should be less than a limit voltage in order not to breakdown the gate oxide.
The gate oxide is surmounted by a gate stack comprising a metal layer and a polysilicon layer.
It has recently been proposed to use NO gas for nitriding gate oxide layers.
The gate oxide and native oxide is denoted by the blue oxygen isoconcentration surface.
In integrated circuit designs, it is generally desirable to have a thin gate oxide.
EV Gate oxide thickness of first gate of access transistor.
Thus, it is possible to produce the gate oxide in a number of ways and notably,.
Between each thick oxide region has been formed a first gate oxide layer 2.
See also
Process for nitriding a gate oxide layer of a semiconductor device, comprising,.
Producing an oxide layer on the substrate constituting the gate oxide of the component ;.
Overstressing the gate oxide can lead to stress-induced leakage current.
Transistors smaller than 7 nm will experience quantum tunnelling through the gate oxide layer.
However, the gate oxide remains one of the major weakness of this device.
First, a modeling of the trapping mechanism in the gate oxide ofsmall transistor is presented.
Covered with a gate oxide layer the single-crystal silicon of the circuit surface ;.
Deposition of aluminium, hafnium and zirkonium oxide thin films for gate oxide applications.
Depositing gate oxide on said active semiconductor region in line with said channel region ;.
The transistor of claim 1, further comprising a gate oxide layer covering the channel area.
During rewrites, the gate oxide in the floating-gate transistors gradually accumulates trapped electrons.
The oxide deposited beforehand may be removed, a conformal gate oxide may then be deposited.
During this step, the gate oxide is exposed to the plasma in the open regions.
Scientists selected a high-κ dielectric to replace the commonly used gate oxide material silicon dioxide.
For example, the gate oxide thickness controlled by the input B may be increased.
The MOS transistor comprises a polycrystalline silicon gate 3 formed on a gate oxide layer 4.
Thus, any risk of damaging the gate oxide during the main etching step is avoided.
At least one control circuit comprising MOS transistors having a first gate oxide thickness ; and.
Ox denotes the gate oxide capacity ;.
A gate oxide layer 24 is arranged under the transistor floating gates.
Forming at least one gate stack including gate oxide and doped polysilicon in each tub ;.
The gate oxide 105 becomes locally conductive at the disrupted zone.
E ox, the permittivity of gate oxide or insulation used ;.
Since metal 2 is not built yet, there is no diode connected to the gate oxide.
A first layer of gate oxide 10 is formed in contact with the crystal 1.
Under the floating gate 1 is arranged the gate oxide layer 5.
The reduction of gate oxide portion 27 by hydrogen modifies its properties.
Silicon dioxide ( SiO2 ) has been used as a gate oxide material for decades.
Transistors of which the gate oxide insulating layer has a thickness between 0 and 1.5 nm.
Isolated memory cells, for example defects in the gate oxide of a cell ;.
The gate electrode layer 3 and the gate oxide layer 2 are covered by an insulation layer 7.
Indeed, the silicon or germanium ions alter the structure of gate oxide layer 19.
Transistors of which the gate oxide has a thickness between 0 and 1.5 nm.
There is also a capacitor C'OG at the level of the gate oxide layer 27.
The gate stack 31 comprises a gate oxide 33 covering the channel of the transistor 3.
