Examples of 'germanium layer' in a sentence
Meaning of "germanium layer"
germanium layer: This phrase refers to a thin coating or stratum of the chemical element germanium, often used in semiconductor technology or optical applications
How to use "germanium layer" in a sentence
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germanium layer
Germanium layer lying on top of the insulator.
The process is repeated on the next germanium layer.
The silicon and germanium layer is then selectively etched with respect to the silicon.
Use a silicon on insulator substrate on which a germanium layer can be deposited.
The germanium layer 2 is preferentially monocrystalline.
Of germanium on insulator with electrical properties of the germanium layer that are particularly beneficial.
Forming a strained silicon germanium layer by epitaxial growth over a silicon layer disposed on a substrate ;.
Step of producing constituent elements of the said electronic device on the said germanium layer.
Etching of the silicon or germanium layer to bound the transistor channel ;.
According to this second embodiment, the semiconductor layer is advantageously a thin germanium layer.
This example illustrates the preparation of a germanium layer from substrates comprising,.
The process according to claim 8, wherein the semiconductor layer is a thin germanium layer.
Method for transferring a thin germanium layer onto a first silicon support, the method comprising,.
Thus, the silicon layer is preferably strained in tension and the germanium layer in compression.
After annealing, the germanium layer may undergo a chemical-mechanical polishing treatment as described above.
See also
As a variant, the silicon layer 1 can be eliminated, and the germanium layer acts as support.
Single-crystal germanium layer is then deposited by CVD under the following conditions,.
The result was a superconducting ' doped ' germanium layer about 60 nanometres thick.
The germanium layer 4, at this stage superficial.
The silicon nitride pattern 16 exposes a portion of the strained germanium layer 11.
Oxidation of germanium layer 11 may be partial or total.
As illustrated in FIG . 1, a silicon layer 1 is provided covered by a germanium layer 2.
A germanium layer 2 is epitaxially grown on the silicon layer 1 in a step F 2.
According to one embodiment, the silicon germanium layer has a thickness of between 20 and 200 nm.
The germanium layer 2 presents a thickness which is advantageously comprised between 0.1 um and 10 um.
Then as shown in FIG . 1I, a GaAs layer is grown on the germanium layer 7.
The thickness of germanium layer 11 arranged on gate 2 is advantageously comprised between 4 nm and 10 nm.
The germanium layer 4 ( the thickness of which is less than the critical thickness ) ;.
The thick, rigid germanium layer is removed, reducing the cell 's cost and 94 % of its weight.
The germanium layer then exhibits, at ambient temperature, a tensile residual deformation of the order of 0.2 %.
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