Examples of 'hydrogenated amorphous' in a sentence
Meaning of "hydrogenated amorphous"
hydrogenated amorphous - a type of substance that has been treated with hydrogen and lacks a definite shape or form
How to use "hydrogenated amorphous" in a sentence
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hydrogenated amorphous
And an external layer of hydrogenated amorphous carbon.
Hydrogenated amorphous carbon is used as a coating.
Preparation and properties of sputtered hydrogenated amorphous silicon.
Hydrogenated amorphous silicon alloy films are prepared by deposition in a deposition chamber.
All photosensitive elements in hydrogenated amorphous silicon are suitable for the purpose.
A barrier layer with a silicon oxide base is covered with a protective layer of hydrogenated amorphous carbon.
The choice of hydrogenated amorphous silicon carbide is particularly appropriate as a result of its transparency.
Preferably, the textured layer is a layer made of hydrogenated amorphous carbon.
Including boron in a hydrogenated amorphous silicon alloy creates a positively doped conductive region.
By way of example, said semiconductor can consist of hydrogenated amorphous silicon.
The hydrogenated amorphous carbon protects the coating from damage caused by abrasion.
It is already known how to manufacture large-format panels of hydrogenated amorphous silicon.
The hydrogenated amorphous carbon layer may be the outer layer of the coating.
The photodiode as claimed in claim 1, wherein the insulator is a hydrogenated amorphous insulator.
The invention relates to a hydrogenated amorphous carbon coating as well as a method for producing same.
See also
The method of claim 7, wherein the textured layer comprises hydrogenated amorphous carbon.
Active matrix display screen using hydrogenated amorphous silicon carbide and process for producing this screen.
Means according to claim 1, characterized in that the photoconductive material is hydrogenated amorphous silicon.
A first hydrogenated amorphous silicon layer on the insulating layer ;.
Preferably, the layer made of a hard material is a layer made of hydrogenated amorphous carbon.
In addition, hydrogenated amorphous silicon carbide is known to be a thermal insulator.
Preferably, the hard material making up the layer deposited in step a is hydrogenated amorphous carbon.
Deposition of a thick hydrogenated amorphous silicon layer on the insulating layer ;.
Advantageously, the first and third electrical insulating layers are formed of hydrogenated amorphous carbon.
This is made possible through the use of hydrogenated amorphous silicon carbide as semiconductor 40.
The hydrogenated amorphous carbon coating was deposited on the top surface of the intermediate layer 3 '.
The photodiode as claimed in claim 1, wherein said undoped amorphous semiconductor is hydrogenated amorphous silicon.
Conversely, including phosphorous in a hydrogenated amorphous silicon alloy creates a negatively doped conductive region.
Hydrogenated amorphous carbon coatings are degraded thermally at temperatures above approximately 400°C.
A semiconductor substrate of lightly n-doped hydrogenated amorphous silicon, having a first face and a second face.
A hydrogenated amorphous silicon layer 11 provides the transition between the P and I zones.
For example, the photosensitive element in hydrogenated amorphous silicon may constitute a junction presenting a depleted layer.
Hydrogenated amorphous silicon ( aSi, H ) has been studied for applications in solar cells for several decades.
The subject of the invention is also a hydrogenated amorphous silicon carbide film that includes through-pores.
The hydrogenated amorphous silicon germanium alloys were deposited at a substrate temperature of 220°C.
In the same way, a layer of intrinsic hydrogenated amorphous silicon 40 is then deposited.
However, the hydrogenated amorphous carbon film presents very high intrinsic stresses, of some several GPa.
Producing a passivation layer of intrinsic hydrogenated amorphous silicon ( 6 ) on said first surface ;.
Hard hydrogenated amorphous carbons are also known as diamond-likecoatings ( DLC ).
This is followed by the deposition thereon of a hydrogenated amorphous silicon layer 110.
A second type n+ hydrogenated amorphous silicon layer on the first silicon layer for producing ohmic contacts ;.
It then includes a transparent conductor 4, and an n + doped hydrogenated amorphous silicon layer.
Process for fabricating a hydrogenated amorphous silicon carbide film having through-pores, the process comprising,.
Materials of DLC type are also known as hydrogenated amorphous carbon ( a, CH ).
Hydrogenated amorphous silicon ( a-Si, H ) was prepared by evaporating Si in a controlled ambient of reactive gases.
A passivation layer of PECVD deposited intrinsic hydrogenated amorphous silicon ( 6 ) on said first surface ;.
The thickness of the hydrogenated amorphous silicon carbide layer is between 20 and 100 nm.
According to the invention, DLC is taken to mean a hydrogenated amorphous carbon material denoted a-C, H.
The p layer 79 is again hydrogenated amorphous silicon a-Si, H, doped with boron and optionally with carbon.
In practice, the carbon concentration, in the hydrogenated amorphous silicon carbide, is between 2 and 10 %.
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