Examples of 'indium phosphide' in a sentence
Meaning of "indium phosphide"
indium phosphide: Indium phosphide is a compound semiconductor material with applications in electronics and optoelectronics. It is commonly used in the production of photodetectors, solar cells, and high-speed electronics devices. Indium phosphide exhibits properties that make it valuable for various technological advancements in telecommunications and energy fields
How to use "indium phosphide" in a sentence
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indium phosphide
Mostly used substrate is indium phosphide InP.
Indium phosphide ( InP ) is a binary semiconductor composed of indium and phosphorus.
Active photonic crystals in indium phosphide membrane.
A junction device according to any preceding claim in which the capping layer comprises indium phosphide.
Fabrication of an indium phosphide based waveguide.
Indium arsenide is sometimes used together with indium phosphide.
They are typically indium phosphide and gallium arsenide.
The top confinement layer consists of p type indium phosphide.
Thereafter, it is assembled to the indium phosphide baseplate by thermal fusing.
The capping layer need not necessarily be of indium phosphide.
Inserting said indium phosphide part in an etching enclosure provided with electrodes ;.
Method of etching a surface of an indium phosphide part.
In another variant, the indium phosphide forming the electrically insulating layer is of non-doped type.
This layer consists of indium phosphide.
Indium phosphide ( InP ) and GaP are used as a semi-conductors, often in combination of related arsenides.
See also
The material of these layers is indium phosphide InP.
An n-doped indium phosphide substrate.
This material was then replaced by indium phosphide InP.
Indium phosphide ( InP ) is one of the most advantageous materials for substituting cadmium-based nanocrystals.
The main materials are the gallium arsenide and indium phosphide.
That 's possible because the compound indium phosphide emits terahertz waves when excited.
It is also such that its crystal lattice is similar to that of indium phosphide.
This substrate is preferably made of indium phosphide doped with n type carriers.
The modulator claimed in claim 1 wherein said substrate is made of indium phosphide.
In the new study, the membrane consisted of indium phosphide photocathodes and titanium dioxide photoanodes.
Unless stated otherwise, these layers are made of indium phosphide.
Aluminium gallium indium phosphide (AlGaInp) alloy is used for obtaining red, yellow and orange lights.
The present invention relates to etching a surface of an indium phosphide InP part.
The laser has a single crystal indium phosphide ( InP ) substrate 10, taking the place of an electrode.
A device as claimed in claim 2 integrated on an indium phosphide substrate.
FIG . 2 shows an ingot of indium phosphide ( InP ) and its axes and defining facets ;.
According to one embodiment, the component comprises an indium phosphide substrate.
For a wavelength of 1.1 um, indium phosphide In P satisfies this condition.
A method according to claim 1, wherein the intermediate layer is made of indium phosphide.
The substrate S consists of indium phosphide ( InP ) of the n+ type.
The present description has been given principally with respect to indium phosphide ( InP ).
In general, the substrate 1 is made of indium phosphide ( InP ) doped with n-type carriers.
The sheathing layer and the intermediate layer are preferably made of indium phosphide ( InP ).
The laser is essentially constituted in a monocrystaline indium phosphide wafer ( which is the base material ).
Abstract, This work deals with the nitridation of the indium phosphide.
Preferably, the said semi-insulating material consists of indium phosphide incorporating iron.
The device as claimed in claim 1, in which the component comprises an indium phosphide substrate.
Other articles in the same magazine describe the use, of indium phosphide and gallium nitride.
According to one characteristic, the collector layer is indium phosphide ( InP ).
The preferred absorbent layer is an indium phosphide ( InP ) alloy.
The receiver integrates more than 150 optical devices on a single monolithic Indium Phosphide chip.
Lower horizontal layer of a substrate in indium phosphide ( InP ) ;.
Examples of the first material system include Gallium Arsenide ( GaAs ) and Indium Phosphide ( InP ).
The substrate 10 may be a substrate made of silicon, indium phosphide or gallium arsenide.
In general, the cladding layer of an amplifier is made of indium phosphide ( InP ).
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Mostly used substrate is indium phosphide InP
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This bone has trace amounts of zinc phosphide
Hydrogen phosphide and products liable to liberate it
