Examples of 'ingan' in a sentence
Meaning of "ingan"
The word 'ingan' does not appear to be a commonly used English word, and its meaning could not be found
How to use "ingan" in a sentence
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ingan
Calculation of positron annihilation characteristics in InGaN alloys.
The toxicology of InGaN has not been fully investigated.
Modeling positron states and annihilation in InGaN semiconductor alloys.
Early InGaN based microLED arrays and microdisplays were primarily passively driven.
Scientists also had success exploiting InGaN on zinc oxide.
Hongik ingan pc cafe.
Finally the origin of the high efficiency of InGaN QWs is discussed.
Spurious depositions of InGaN which cover the surfaces of the wafers with conducting materials.
The material prop erties are discussed followed by a discussion of InGaN solar cells.
The InGaN layers are only ten atomic layers thick and are called quantum wells.
The inventors have grown structures with posts including at least one InGaN layer.
Active area 4 c is formed of InGaN quantum wells and corresponds to the photon emission area.
An original treatment has been developed to analyze quantitatively InGaN QW thickness fluctuations.
InGaN was grown on a GaN buffer on a transparent substrate, sapphire.
Find out more about Ingan Tours.
See also
However, putting the InGaN on an oxide-sapphire substrate using a proven Soitec process relaxes the strain.
Tom and Huck witness a murder at the cemetery by Ingan Joe.
Some phosphor-based white LEDs encapsulate InGaN blue LEDs inside phosphor-coated epoxy.
OBIC measurements demonstrate that, this signal is exclusively generated in the InGaN MQW region.
Spectrum of a white-light LED where GaN or InGaN blue source pumps Ce, YAG phosphor.
The active portion 30 may comprise one or more quantum wells, for example made of InGaN.
Finally, the selective growth feasibility of InGaN nanorods by HVPE is initiated.
GaN and InGaN NWs were studied by EBIC, photo - and cathode-luminescence.
We study the radiative recombination of optically generated charges in thin ( 2 nm ) InGaN quantum wells.
Magnesium is incorporated in InGaN during the very growth of nanowires 110.
As an example, the led 2 is a InGaN led.
Layer 102 is formed of InGaN to a thickness of approximately 8 nm.
More specifically, semiconductor lasers emitting from 350 to 450 nm have been realized using an InGaN material.
As an example, the InGaN led 2 emits electromagnetic radiation with a wavelength of 460nm.
Finally, we observe the presence of short-range order in InGaN / GaN core-shell nanowires.
The InGaN layer 5 is sandwiched between the n-type GaN layer 4 and the p-type GaN layer 3.
Hongik Ingan ( Hangul, 홍익인간 ; Hanja, 弘益人間 ) is the unofficial national motto of South Korea.
