Examples of 'insulated gate' in a sentence
Meaning of "insulated gate"
insulated gate ~ An insulated gate is a component used in electronics, particularly in field-effect transistors, where the gate is electrically insulated from the main semiconductor material to improve performance and reduce leakage currents
How to use "insulated gate" in a sentence
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insulated gate
The transistor may be an insulated gate bipolar transistor.
Insulated gate handle.
Fast switching power insulated gate semiconductor device.
Insulated gate bipolar transistors LGBT.
The design of a lighting dimmer based on an insulated gate bipolar transistor.
Forming an insulated gate on the substrate ;.
The switching units are formed with transistors of the insulated gate bipolar type.
A single bipolar transistor or an insulated gate transistor may be substituted for the Darlington device.
Field of the Invention The present invention generally relates to insulated gate MOS transistors.
Forming an insulated gate on the channel ;.
Each of said connection circuits comprises one or more insulated gate bipolar transistors.
An insulated gate transistor comprising,.
The transistor is an insulated gate bipolar transistor ;.
This uses field-effect transistors with insulated gate.
An insulated gate zone separated from said active zone by an insulating layer ;.
See also
These power switches are implemented using insulated gate bipolar transistors ( IGBTs ).
Forming an insulated gate above the central strip of the active area ; and.
The electric device according to claim 9, the transistor being an insulated gate bipolar transistor.
Depositing an insulated gate conductor in the trenches on and under the membrane, and.
This patent has been called " the seminal patent of the insulated gate bipolar transistor.
Alternatively, the insulated gate semiconductor device may be an insulated gate bipolar transistor.
Positive charges are always present in the oxide of insulated gate field-effect transistor devices.
Insulated gate transistors bipolar ( LGBT ) provide true isolation of the input voltage.
Disposing a source, a drain and an insulated gate region above the intermediate layer ; and.
The transistor T1 could however be a field effect transistor having an insulated gate.
Said current control means may include insulated gate bipolar transistors ( IGBTs ) as switching elements.
Insulated gate 10 is a detection layer comprising dangling bonds 14.
Apparatus according to claim 1, wherein the power transistor is an insulated gate bipolar junction transistor.
Abstract, Insulated Gate devices are more and more often used in AC operated light dimmer.
Such a semiconductor switching unit may for instance be an insulated gate bipolar transistor ( LGBT ).
Similarly, the lower insulated gate is electrically connected to a contact electrode 44.
This channel is coated with an insulated gate G 4.
In high-voltage applications, insulated gate bipolar transistors ( IGBTs ) are typically used instead of MOSFETs.
Here, the valves may correspond to a thyristor or an insulated gate bipolar transistor ( LGBT ).
The high insulated gate of transistor N 8 forms a word line WL of cell 1.
LGBT » Bipolar transistor with insulated gate electrode.
An insulated gate 2, formed above area 1, defines a channel region.
Still further, said invertors may include insulated gate bipolar transistors ( IGBTs ).
Conventionally, insulated gate 30 extends slightly at the surface of insulating regions 36.
These are preferably silicon-based insulated gate bipolar transistors (LGBT).
Upper insulated gate 32 is formed of a detection layer comprising dangling bonds 35.
Here, the valves may be thyristors or insulated gate bipolar transistors ( LGBT ).
The lower insulated gate is formed of a portion of trench 25 arranged in a well 49.
In another embodiment, the invention comprises an insulated gate bipolar transistor ( LGBT ).
The said insulated gate zone has a length less than or equal to 0.2 um ;.
Here, the valve may be a thyristor or an insulated gate bipolar transistor ( LGBT ).
So-called insulated gate bipolar transistor ( LGBT ) depletion ( IGBTD ) components are then obtained.
Here, each of the valves may be a thyristor or an insulated gate bipolar transistor ( IGBT ).
Wafer 25 forms a lower insulated gate of the transistor, insulating layer 23 forming a lower gate insulator.
In this case, the value may correspond to a thyristor or insulated gate bipolar transistor ( IGBT ).
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