Examples of 'ion implantation' in a sentence
Meaning of "ion implantation"
Ion implantation is a technique used in materials science and semiconductor manufacturing. It involves bombarding the surface of a material, typically a semiconductor, with high-energy ions to alter its physical or chemical properties. This process can be used to introduce impurities, modify crystal structure, or create specific conductivity profiles, depending on the desired application or outcome
How to use "ion implantation" in a sentence
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ion implantation
Channelling and ion implantation in semiconductor lattices.
Inclusions may also be generated by ion implantation.
Ion implantation is commonly used to dope semiconductors.
A known process based on ion implantation is recoil implantation.
Ion implantation units for the microcircuit industry.
It is for this reason that ion implantation is preferred.
Thus ion implantation is a special case ofparticle radiation.
These layers may also be obtained by ion implantation.
Helium ion implantation into minerals.
It can also be carried out by ion implantation of sulphur.
Thus ion implantation is a special case of particle radiation.
Into the reactor or by ion implantation.
Ion implantation process characterization method.
The implantation is typically an ion implantation.
Ion implantation may be conducted using hydrogen ions.
See also
These doped areas are advantageously formed by ion implantation.
Ion implantation permits placing out of thermodynamic equilibrium.
The dopants may be added by ion implantation or others.
Demonstrated ion implantation for improved hardness of steel.
Method of manufacturing field effect transistors of GaAs by ion implantation.
Two or more ion implantation layers may be formed.
A known method for implanting particles in a solid is ion implantation.
The effects of ion implantation varies according to multiple variables.
It is easy to check these different parameters by using ion implantation.
Nitrogen ion implantation treatment is performed on the metal antagonist.
In the reactor or by ion implantation.
Single ion implantation step serves to obtain the buckling.
Doping for the channel region is provided by ion implantation.
Ion implantation notably is well suited to very small doses.
The surface layer is formed by plasma diffusion or by ion implantation.
Metal ion implantation apparatus.
This incorporation step is conventionally carried out by ion implantation of fluorine.
Ion implantation surface charge control method and apparatus.
This step can be performed by ion implantation or by immersion in a nitrogen plasma.
Ion implantation technique may be used to introduce the dopants.
The present invention relates to an ion implantation process characterization method.
Ion implantation in semiconductors.
The doping of active ions may thus be done by diffusion or by ion implantation.
Etching and ion implantation take place to create electrical circuits.
This particular process can be used for doping by ion implantation.
Ion implantation equipment can be used to achieve ion beam mixing.
Equipment designed for ion implantation and having any of the following.
Ion implantation is carried out at room temperature under vacuum conditions.
Boron doping by both thermal diffusion and ion implantation techniques were investigated.
The ion implantation of boron or other suitable dopant is then performed.
Certain number of techniques allowing the ion implantation processes to be characterized are known.
An ion implantation is a possibility for the modifying of surface characteristics of materials.
The present invention relates to an ion implantation machine presenting increased productivity.
Ion implantation techniques can enable their artificial creation in predetermined positions.
We use scan steps with an ion implantation beam or irradiation by an electron beam.
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