Examples of 'memory point' in a sentence
Meaning of "memory point"
memory point - refers to a specific piece of information or detail that stands out in one's memory, often indicating its significance or importance in a particular context
How to use "memory point" in a sentence
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memory point
The memory point is programmed by hot electrons.
This solution is extremely costly from a memory point of view.
The memory point is written into.
This line controls the reading of the value of the memory point.
Each information bit is stored in a memory point including a variable resistance element.
This is more particularly due to the use of a static memory point only.
It deduces therefrom that the memory point was programmed to one or to zero respectively.
This corresponds to the reading of a first bit of the considered memory point.
Each element has at least one memory point for marking a priority flag.
This plan view shows the four electrodes controlling the memory point.
A memory point represents a stability condition flag for inhibiting the capacitor charging and discharging.
The loss of charge in the floating gate determines the retention time of a memory point.
Each memory point has been illustrated in the drawing as being a MOS transistor.
Each memory cell comprises a selection transistor TS and a phase change memory point P.
MOS memory point.
See also
In some cases, this is unexceptional from a memory point of view.
For this reason, the memory point density is virtually unchanged.
An electronic transducer ( for example a liquid crystal ) is in contact with each memory point.
Definition of the states of the memory point during cooling,.
Acting as a memory point while the information in the row 4 is to be used.
The present invention relates to a non-volatile memory and more specifically to a reprogrammable memory point.
Each memory point comprises a source, a drain and at least one gate.
Their lower part, can play the role of bottom electrode in the OxRAM memory point.
In normal operation, each memory point may have one of two binary states.
Each memory point includes a memory element, or storage element, of variable electrical resistance.
There are two capacitors C'OG in a memory point.
According to one embodiment, the memory point comprises a capacitance in parallel with a resistor.
Layer 4 is intended for forming the tunnel oxide of floating gate FG of memory point T 2.
According to one embodiment, the memory point of a memory cell is a phase change memory point.
Above semiconductor substrate 22 are formed the gate structures of transistor T 1 and of memory point T 2.
Thus, the programmation of a memory point has to take into account the adjacent memory points.
It is consequently not possible to read and write such a memory point more than 109 times.
The architecture of a memory point column of this second type is shown in FIG . 1.
Inverters I 1 and I 2 form a bistable structure or memory point that can take two states.
Thus, each memory point is a single-bit point.
FIG . 1A shows a transistor T of a floating gate memory point.
This memory point can be programmed, that is, written to or erased, or read.
FIG . 3 is a schematic representation of a memory point according to the invention.
It is of the memory point type 7 with transistor 1 with floating gate 4.
The integrated circuit IC 2 also comprises a volatile memory point for memorizing an indicator flag THR 2.
Each memory point is formed of a vertical nanostructure having as base a conductive pad 240.
However, in this structure, each memory point is made by a pair of transistors.
In FIG . 1A is shown a transistor T of a floating gate memory point.
FIG . 1 is an electric diagram of a memory point according to a particular embodiment of the invention ;.
Memory cell 1 is formed of a read transistor T 1 and of a memory point T 2.
Referring to FIG . 1, a memory point is illustrated which may be made in N-MOS technology.
Memory cell 20 comprises a selection transistor T 1 or a storage transistor or memory point T 2.
FIG . 5 shows an embodiment of a three-bit memory point column according to the present invention ;.
Said memory point comprises a first multimagnetic layer known as “ reference layer ” 21.
FIG . 2 shows the schematic electric diagram of a memory point according to the present invention ;.
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