Examples of 'n-channel' in a sentence
Meaning of "n-channel"
n-channel (noun) - N-channel is a term used in electronics and semiconductor physics to describe a type of field-effect transistor (FET) where the majority charge carriers are electrons
How to use "n-channel" in a sentence
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n-channel
Most common is the n-channel native transistor.
It is easy to generalize the question by analogy with an n-channel architecture.
It can be switched to n-channel in the channel switching unit.
Said fourth switching means comprises at least one n-channel transistor.
The input referred noise for n-channel CHFETs is presented and discussed.
N-channel logic does not provide the optimal levels of input noise margin.
The receiver has a physical layer n-channel receiver for receiving the packets.
The n-channel is created by applying voltage to the third terminal, called the gate.
The result is improved isolation for the n-channel devices subsequently formed in the p tub.
The first n-channel transistor can be connected to the second low voltage supply.
There was an overheat alert Near the n-channel power bus.
The second n-channel transistor has a source connected to the second low voltage supply.
All conductivity types may be inverted to form N-channel transistors.
The use of low-dissipation n-channel FETs again ensures a minimal dissipation in the circuit.
According to an embodiment of the present invention, said transistors are N-channel MOS transistors.
See also
The N-channel transistors are matched for accuracy reasons.
These phenomena can be briefly described as follows, using as an example an N-channel transistor.
This leads to the n-channel FET technology.
This negative voltage on terminal g enhances the blocking state of the N-channel transistor.
The second transistor is an N-channel MOS transistor or an NPN bipolar transistor ;.
The first transistor is an NPN bipolar transistor or an N-channel MOS transistor ;.
The first N-channel MOS transistor is directly controlled by an input signal.
The above example illustrates the case of two N-channel MOS transistors in series.
In N-channel HARQ, the retransmission is always sent using the same HARQ process.
Another solution consists in placing an N-channel MOS transistor in the negative polarity line.
According to another preferred embodiment of the present invention, the FET is an N-channel FET.
External hot swap N-channel MOSFET for lowest power dissipation and highest system efficiency.
In an exemplary embodiment of the present invention, an N-channel SAW HARQ scheme is taken.
N-channel logic, in some configurations, does not provide optimal levels of input noise margin.
Again depletion and enhancement mode transistors are classified into N-channel JFET and P-channel.
Near the n-channel power bus.
The bias signal LBIAS is connected to the gate of an N-channel bias transistor N1.
N-channel power bus . About to swap the module.
The LGBT possesses advantageous characteristics of PNP bipolar transistors and N-channel MOSFETs.
For example the use of FETs or of bi-polar n-channel or p-channel transistors is possible.
The n-channel MOSFET device has source, drain, and gate terminals.
Said second switching means comprises at least one n-channel transistor ;.
In the audio system 1 an N-channel audio signal is supplied to an encoder 2.
The control matrix of Figure 7 employs n-channel transistors.
The column drivers are n-channel FET 's that sink current to ground.
Conventionally, matrixing is applied on the original N-channel input signal.
The other transistors are of the N-channel type as for the other layouts 4 a and 4 b.
The MOSFET ( field effect transistor ) may alternatively be implemented as a p-channel or an n-channel MOSFET.
Also, greater punch-through resistance for the n-channel device would also be desirable.
N-channel depletion MOS field-effect transistor.
Figure 1 is a scheme of the staggered mode n-channel OFET device structure.
N-channel enhancement MOS field-effect transistor.
The charging and discharging circuits are constituted by p - and n-channel MOS transistors, respectively.
For N-channel MOS transistors, a silicon substrate is better adapted.
Each inverter is formed by a P-channel transistor and an N-channel transistor, connected in series.
