Examples of 'n-type doping' in a sentence
Meaning of "n-type doping"
n-type doping: This phrase is associated with the process of introducing impurities into a semiconductor material to increase the number of negative charge carriers, typically electrons, to modify its electrical properties
How to use "n-type doping" in a sentence
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n-type doping
Inducing n-type doping within silicene requires an alkali metal dopant.
The photovoltaic detector is defined on a substrate of GaSb with n-type doping.
Um layer of GaSb with n-type doping is epitaxially grown on this substrate.
These dissymmetry means obtained by compensation p-type implantation produces n-type doping.
Simultaneously to this baking, a diffusion of N-type doping agents is caused throughout the substrate.
It is also proved that non-doped GaN presents a consequent residual n-type doping.
On the one hand, ISB photodetection requires n-type doping of the active nanostructures.
Similarly a negatively charged anion would donate an electron, leading to overall n-type doping.
Likewise, n-type doping is doping with negative charges.
For example, bismuth is used to introduce a low deep n-type doping in silicon nanowires.
To help understand how n-type doping is accomplished, consider the case of silicon ( Si ).
Phosphine is used as an ion-implantation and CVD source for n-type doping in semiconductor manufacturing.
An N-type doping is then implanted to define collector 30 of the NPN transistor.
A semiconductor element with n-type doping forms,.
Bismuth introduces a n-type doping at a shallow level, at 160 mV below the silicon conduction band.
See also
Substrate 1 is only covered by mask 3 in the areas where n-type doping is desired.
The material can be doped n-type doping with, for instance, halogen elements.
The ground plane region gpn 2 thus has N-type doping.
This is often shown as n+ for n-type doping or p+ for p-type doping.
The semiconductor element 36 comprises an n-type doping.
The low residual n-type doping produces intrinsic conductivity characteristics at a temperature of 190°K.
The electrodes 1, 2 are doped with arsenic or phosphorus, and thus have an N-type doping.
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