Examples of 'said silicon' in a sentence
Meaning of "said silicon"
said silicon - likely a reference to a specific quote or statement regarding silicon or a material called silicon
How to use "said silicon" in a sentence
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said silicon
Preferably said silicon dopant is incorporated into the crystal lattice of the graphene.
Dip coating PVDC on said silicon oxide coating.
Reacting said silicon dioxide source with a caustic to form a metal silicate solution ;.
Applying a second photoresist mask to said silicon oxide layer ;.
Applying, to said silicon layer, particles comprising at least one ceramic oxide.
A composition according to claim 6, wherein said silicon entities are tetrapropyl orthosilicate.
Mixing said silicon dioxide source with a caustic and water in order to form a slurry thereof ;.
Catalyst according to claim 1, wherein said silicon grafted on said alumina is tetraethoxysilicon.
The metal part forms a sleeve that covers the peripheral wall of said silicon part ;.
The method according to claim 4, wherein said silicon alkoxide is tetraethoxy silane.
Enclosing said silicon carbide tubes within thin - walled graphite tubes ;.
The transparent substrate of claim 6, wherein said silicon nitride is doped with aluminum.
Said silicon substrate has a layer of insulating material 93 - 1, silicon oxide, buried in the silicon.
The method of claim 1 wherein said silicon material comprises a silicon alloy.
Said silicon carbide single crystal having a resistivity of at least 5000 ohm-cm at room temperature.
See also
A method according to claim 29 wherein said silicon nitride includes a minor amount of a conductive metal.
The aqueous gelatin solution according to claim 7, wherein said silicon alkoxide is tetraethoxy silane.
The device according to claim 20 wherein said silicon member further includes conductive particles embedded therein.
Material as claimed in claim 1, characterized in that said silicon compound is SiO ₂.
FIG . 8 A sectional view of said silicon wafer in which these integrated circuits are formed.
Material as claimed in claim 1, characterized in that said silicon compound is Si ₃ N ₄.
Applying a first photoresist mask to said silicon oxide layer to outline a fuse link line ;.
A method as recited in claim 3 in which said silicon oxide comprises TEOS.
The method of claim 5 in which said silicon dioxide is formed from TEOS.
The method of claim 1, wherein said silicon precursor gas is a silane.
The process as defined by claim 12, said silicon compound comprising an organosilicon compound.
The process as defined by claim 12, said silicon compound comprising a precursor of silica.
The structure of claim 11, where said silicon emitter layer is an epitaxial layer.
A method according to any one of claims 37 to 45 wherein said silicon alkoxide precursor is tetramethylorthosilane.
Device according to claim 2 CHARACTERIZED IN THAT said silicon layer is less than 10 nanometers thick.
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