Examples of 'second semiconductor' in a sentence

Meaning of "second semiconductor"

second semiconductor - a phrase denoting a semiconductor material or device that ranks after another in terms of importance, performance, or time of use

How to use "second semiconductor" in a sentence

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second semiconductor
This transistor constitutes the second semiconductor switch.
The second semiconductor material is also called barrier material.
Forming a second electrical contact contacting the second semiconductor material.
The second semiconductor area is capable of forming a lateral bipolar transistor.
It is then particularly advantageous to use monocrystalline first and second semiconductor films.
The second semiconductor portion may be arranged in the semiconductor layer.
An electrolyte is disposed in contact with the first and second semiconductor electrodes.
Second semiconductor polymer layer surrounding the electrically insulating fluoropolymer layer.
This register may be integrated without any difficulty in the second semiconductor substrate.
The second semiconductor material is different from the third semiconductor material.
The substrate also comprises a second portion not comprising the second semiconductor film.
The first and second semiconductor layers define a junction at an interfaz therebetween.
The first semiconductor nanoparticles have a smaller band gap than the second semiconductor nanoparticles.
The second semiconductor structure is then made adjacent to the first by epitaxial deposits.
The photovoltaic device also includes a second photovoltaic module having a second semiconductor absorber layer.

See also

The first and second semiconductor layers may be formed from gallium nitride.
It further comprises a third portion not comprising the second semiconductor film and the protection layer.
The first and second semiconductor polymer layers may be identical or different layers.
The control unit provides the actual control signal for controlling the second semiconductor switch.
An overcoating shell of the second semiconductor material is formed on the first semiconductor nanocrystal.
Deposition by epitaxy of a layer made from a second semiconductor material ;.
The second semiconductor regions may also be source and drain regions of the second transistor.
Depending on the embodiments, the second semiconductor material is a well or a barrier material.
A second semiconductor element mounted on said rising portion; and.
Eliminating the second semiconductor support ; and.
Second semiconductor film 4 is designed to form a waveguide on the electrically insulating layer.
The first semiconductor material and the second semiconductor material are different ;.
Second semiconductor fluoropolymer layer 5 taking the form of a tape surrounding said layer 4.
According to a first embodiment, the second semiconductor region is a layer of monocrystalline semiconductor material.
The first electrode, the first semiconductor element and the second semiconductor element ; or.
Said stack may comprise a second semiconductor layer on the other face of said metal layer.
A device as claimed in claim 1, wherein the material of the second semiconductor substrate is silicon.
Advantageously, the second semiconductor regions and the compound are based on the same semiconductor.
First semiconductor polymer layer according to a, and a second semiconductor polymer layer according to b.
For the record, the second semiconductor material is advantageously different from the first semiconductor material.
In cooperation with the ceramizing elastomeric layer, a second semiconductor material layer is further co-extruded.
Furthermore the second semiconductor contact layer and the mini-mesa structure are of opposite conductivity type.
Providing each leg with a pair of opposed first and second semiconductor switches ; and.
Depositing aluminum or the second semiconductor material in contact with the first material, and.
The method may further comprise, after recrystallisation, a step for removing the second semiconductor layer.
The second semiconductor regions may in particular be based on Si, or Ge or SiGe.
The first electrode, the first semiconductor element, the second semiconductor element and the second electrode.
Then second semiconductor material Sc 2 is eliminated from uncovered first active area za 1.
Said first semiconductor material is Si and said second semiconductor material is SiGe ;.
A second semiconductor switching element ( transistor ) 13 is connected to the power lines.
The method according to claim 1, wherein said second semiconductor material is Ge or SiGe.
The second semiconductor material 20 forms a first portion 1 b of the semiconductor structure 1.
Second portion B does not comprise second semiconductor film 4.
This second semiconductor layer 203 can for example be in silicon or SiGe.
Third portion C does not comprise protection layer 5 and second semiconductor film 4.

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