Examples of 'selection transistor' in a sentence
Meaning of "selection transistor"
selection transistor - This phrase indicates a process of choosing a specific type of transistor from a variety of options
How to use "selection transistor" in a sentence
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selection transistor
Each switch may be formed by a selection transistor.
Selection transistor can be used in conjunction with each memory cell.
The floating gate transistor is used alone and there is no selection transistor.
The selection transistor may be a field effect transistor or a bipolar transistor.
Another difficulty arises here too because of the elimination of the selection transistor.
That of the selection transistor TS is connected to the word line WL.
These thin spacer layers are again found on the opposite part of the selection transistor.
Selection transistor RS connects the source of follower transistor TS to a column bus BC.
Each memory word thus has a memory cell and an associated word selection transistor.
The voltage Vcc puts the selection transistor TS into the on state.
The memory cell MC comprises a floating gate transistor FGT and a MOS type selection transistor TS.
Each memory cell comprises a selection transistor TS and a phase change memory point P.
In the example, they are connected to the drain of the associated selection transistor.
Each memory cell MC within a word comprises a selection transistor ST and a floating gate transistor FGT.
An arrangement as claimed in claim 1, characterized in that each switch comprises a selection transistor.
See also
The control gate of this selection transistor 9 is connected to the selection terminal 6.
The bit line LB is selected by a bit line selection transistor TSLB.
Thus, selection transistor SW is connected both to photodetector PS and to pyroelectric element PYR.
Controlling the reset transistor and the selection transistor to the on state ; and.
The cell comprises a single transistor, which is a floating gate transistor and has no selection transistor.
Reference 18 designates the gate of a selection transistor associated with the memory cell shown.
Preferably, there is provided means to limit the current conducted by the selection transistor.
The method of claim 9, wherein the selection transistor has the core supply voltage tolerance.
Memory cells of conventional EEPROMs comprise a floating-gate transistor and a selection transistor.
Furthermore, the selection transistor 9 is then off.
Non-volatile memory architecture with a word-based organization includes one selection transistor per word.
This cell 2 comprises a selection transistor 4 and a storage capacitor 6.
The memory cell comprises a floating-gate transistor FGT and a selection transistor ST.
Second selection transistor comprising,.
According to one embodiment, the memory cell selection transistor is a MOS transistor.
Further, selection transistor 307 is controlled to the on state.
This notch pulse turns on the row selection transistor T 5.
Memory cell 20 comprises a selection transistor T 1 or a storage transistor or memory point T 2.
In the exemplary embodiment chosen, only one selection transistor 9 is used.
To achieve this, selection transistor 113 of the pixel is first turned on.
The other end of conductive connection 9 is in contact with source 10 of selection transistor 4.
First gate structure, the so-called selection transistor gate, surmounting a first part of said channel ;.
The device according to claims 1 or 2, wherein the memory cell includes a selection transistor.
The memory cell 202 also comprises a selection transistor coupled in series with each magnetoresistive element.
Naturally, this input terminal 3 is then disconnected from the drain of the selection transistor 9.
The control gate of the selection transistor 20 is connected to the word line W1.
The pixel integration period starts at the turning back off of selection transistor 113.
During this step, selection transistor 307 of the pixel is maintained off.
Gate 5 of transistor 1 is biased to level VDD to turn on selection transistor 4.
Drain 12 of selection transistor 4 is in contact with bit line BL.
In operation, the node R is connected to ground via a selection transistor ( not shown ).
Cell 1 is composed of a selection transistor SG 1 and a floating-gate transistor CG 1.
In operation, the input R is connected to ground via a selection transistor ( not shown ).
FIG . 11 represents a modified block diagram, enabling a more compact realization by saving a selection transistor.
The storage cell C11 has an N channel MOS type selection transistor 20 and a storage capacitor 22.
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