Examples of 'semiconductor film' in a sentence
Meaning of "semiconductor film"
Semiconductor film: A thin layer of semiconductor material used in electronic devices to control the flow of electrical current
How to use "semiconductor film" in a sentence
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semiconductor film
The side walls of the semiconductor film are free.
The electromechanical means can be obtained by overmolding a semiconductor film.
We investigate how the curvature of a semiconductor film affects its electronic and transport properties.
Method for making a wire nanostructure in a semiconductor film.
As a variant, the semiconductor film may be multilayer.
A method for the preparation of a thin semiconductor film.
The semiconductor film 1 may be monolayer.
Process for the production of a structure having a thin semiconductor film on a substrate.
Forming a semiconductor film on a substrate;.
Description will be made of the insulating film and the semiconductor film.
The semiconductor film 4 is a pattern protruding from an electrically insulating film.
The same technique may be used for forming a doped semiconductor film.
The semiconductor film may be formed from silicon and / or germanium.
All that needs to be controlled is the current density in the monocrystalline semiconductor film.
Heating the amorphous semiconductor film to form a crystallized semiconductor film;.
See also
This invention relates to an electrohydrodynamic method for the preparation of a thin semiconductor film.
First semiconductor film 2 is advantageously monocrystalline in order to obtain a diode of better quality.
An electric field is established between the thin semiconductor film and the manipulator.
The semiconductor film 4 is a pattern which protrudes from an electrically insulating film.
The substrate also comprises a second portion not comprising the second semiconductor film.
Second semiconductor film 4 is designed to form a waveguide on the electrically insulating layer.
An increase in kinetic energy activates the removal of undesirable morphologies from the semiconductor film.
A first process of adding a metal element to a semiconductor film having an amorphous structure;.
The semiconductor film and / or the electrically insulating support may be monolayers or multilayers.
It further comprises a third portion not comprising the second semiconductor film and the protection layer.
FIG . 1 shows a thin semiconductor film for making a nanowire structure according to the invention.
Xerographic measurements involve corona charging the surface of an amorphous semiconductor film to a voltage Vo.
Hence, measuring the conductivity of a semiconductor film allows the detection of a particular gas.
These are ballistic electrons, due to the conditions initially fulfilled by the semiconductor film.
A third process of forming a first mask on the semiconductor film having a crystalline structure;.
Stacking of the layers is performed in a direction that connects support layer 4 to semiconductor film 6.
The semiconductor film was obtained by spin-coating of the p3ht in chloroform.
The two gates are separated by the semiconductor film 4.
The metal oxide semiconductor film is formed by vapor-phase film-forming.
The insulation pattern is inserted in the semiconductor film 4.
Gate electrode 1 is separated from semiconductor film 6 by a gate dielectric material ( not shown ).
The deposited semiconductor material 9 can be identical or not to that initially forming semiconductor film 2.
Support substrate 4 is separated from semiconductor film 6 by electrically insulating layer 5.
Third portion C does not comprise protection layer 5 and second semiconductor film 4.
Semiconductor film 6 comprises a source area 2 and a drain area 3 separated by gate electrode 1.
Method of removing contaminants when fabricating a thin semiconductor film comprising,.
In preferential manner, second semiconductor film 4 is connected to a light signal generator ( not shown ).
Device according to claim 1, the semiconductor element comprising a semiconductor film epitaxied on a substrate.
Insulating pattern 7 penetrates into semiconductor film 4, electrically insulating layer 3 and support substrate 2.
Second portion B does not comprise second semiconductor film 4.
The support substrate 6 is separated from the semiconductor film 4 by the electrically insulating layer 7.
This ion implantation enables a counter-electrode 8 to be formed by doping a part of first semiconductor film 2 a.
Producing a first structure having a thin semiconductor film ( 2 ) on a first substrate, and.
First area 3 a presents a first dielectric constant value between support substrate 2 and semiconductor film 4.
The electrode structure of embodiment 11, wherein a semiconductor film is provided over the electrode.
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Examples of using Semiconductor
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The semiconductor laser will be damaged if it overheats
For measuring or checking semiconductor wafers or devices
The semiconductor laser will be damaged if it over
Examples of using Film
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The film has not started yet
We are finishing the film about that invention
Film can be applied without disconnecting pump
