Examples of 'sige' in a sentence
Meaning of "sige"
Sige (noun): a semiconductor technology that integrates both digital and analog circuits on a single chip, allowing for improved performance and efficiency in electronic devices
How to use "sige" in a sentence
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sige
Sige what do you want for lunch.
This other material may be SiGe or SiN.
The silicon or the SiGe may be monocrystalline or polycrystalline.
The superficial layer is preferably a layer of SiGe.
The SiGe zones are then enriched.
A description of a BiCMOS SiGe technology is presented.
Subthreshold current was bigger than strained SiGe channel.
The material SiGe is deposited by epitaxy on silicon substrates.
The bare skal sige yes.
The layer of SiGe is therefore between two layers of silicon.
Integration of a low noise amplifier using SiGe technology.
An epitaxial SiGe layer is grown on the thin silicon layer.
The superficial layer may comprise an SiGe layer.
Such a step of SiGe epitaxy is conventional and known per se.
The first protection layer can be made in SiGe.
See also
Germanium condensation of the SiGe layer intended to be enriched with germanium.
They may also be obtained by selective growth of SiGe.
It is in SiGe for example.
Advantageously it may be made of germanium or SiGe.
Isotope etching of the SiGe is not very selective in relation to the silicon.
Remove an oxide layer formed by oxidation of the SiGe layer.
The SiGe film is not stressed because its lattice parameter is respected.
The base of the bipolar transistor is made of an SiGe alloy.
Such properties have made SiGe thermoelectrics convenient for power generation in space.
The bloodtest known as a specific IgE or the sIgE test.
Such a method includes the growth of SiGe crystals which contain a SiGe gradient.
The epitaxy of the second layer may comprise an epitaxy of SiGe.
The thickness of silicon epitaxied on the SiGe is generally limited to several hundred nanometers.
Circuit structures for base stations transmitter in complementary SiGe process.
Polycrystalline SiGe films are also deposited on substrate surfaces coated with a thin oxide.
The second layer can be obtained by epitaxy or silicon or SiGe deposition.
The specific layer may be a SiGe layer epitaxied on a silicon layer of the first part.
The third layer may be composed at least of SiGe or porous silicon.
The thickness of the SiGe is very homogeneous and its crystal quality is very good.
It has been seen that this structure comprises a buried SiGe layer.
The isotropic etching of the SiGe is not very selective with respect to the silicon.
The bottom protective layer may for example be monocrystalline SiGe.
This kind of picture is really interesting sige the main image of your profile.
Each of the active layers of the stack can be made of silicon or SiGe.
Method for producing a field effect transistor with a SiGe channel by ion implantation.
This sacrificial layer is etched with etching stopping on the layers of SiGe.
Ang then go aroung the other sige ang see how he goes the opposite way.
A similar trend was observed in the relationship between sIgE and tIgE levels.
Forunderligt at sige How wonderful to ponder.
Depositing a passivation layer on a bottom etched surface of the second SiGe layer.
SiGe is a semiconductor company working on next generation integrated circuit design.
The third part presents the results of thermal parameter identification in SiGe superlattices.
This leads to crystallized SiGe and Si layers with very few defects.
This makes it possible to conserve a good etching selectivity between the layers of SiGe.
Various known methods exist for etching SiGe and stopping at Si.
