Examples of 'silicon layer' in a sentence

Meaning of "silicon layer"

A silicon layer refers to a thin coating or film made of silicon, a chemical element commonly used in electronics and technology. Silicon layers are often applied to various materials or surfaces to provide insulation, protection, or to enhance specific properties. In devices like integrated circuits or solar cells, a silicon layer is used as a key component for its electrical conductivity and semiconductive capabilities

How to use "silicon layer" in a sentence

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silicon layer
The silicon layer should be as intact as possible.
The semiconducting layer can be a silicon layer.
The silicon layer may be monocrystalline or polycrystalline.
It is then possible to deposit a silicon layer by epitaxy.
The silicon layer is etched to form a pattern of resistive elements.
This is followed by deposition of an epitaxial silicon layer.
The surface of the silicon layer is thus rendered hydrophobic.
The negative electrode initially comprises a silicon layer.
The first silicon layer is eliminated in the connecting area.
On the epitaxially grown silicon layer.
This polycrystalline silicon layer is preferably doped in situ in a conventional manner.
Method of forming a strained silicon layer.
Heterostructures comprising a silicon layer on a sapphire substrate have particular advantages.
A resin layer is then applied to the silicon layer.
A doped polycrystalline silicon layer may also be used as a heating resistor.

See also

It is also protected against physical attacks by a silicon layer.
Etching the monocrystalline silicon layer obtained so as to form said islands.
The surface layer is preferably an amorphous silicon layer.
Different processes of forming a silicon layer on an underlying substrate are per se known.
Method for modifying the doping level of a silicon layer.
The exterior also includes a silicon layer that gives extra protection.
An epitaxial SiGe layer is grown on the thin silicon layer.
A crystalline silicon layer is deposited or epitaxially grown on the porous silicon layer.
These ribs reinforce the stiffness of the silicon layer.
The growth of a doped silicon layer by vapor deposition is a known silicon process.
An upper electrode positioned over the amorphous silicon layer.
Full oxidation of the buried porous silicon layer was subsequently possible.
The stiffness of the structure is provided by the thick silicon layer.
Said second layer can be a porous silicon layer or a porous dielectric layer.
The process used starts from a conventional silicon layer.
This thin silicon layer is coated with a heat sink promoting heat dissipation.
This in no wise disturbs the monocrystalline silicon layer already formed.
The polycrystalline silicon layer disappears and the resistor has an infinite impedance.
Each modulating transistor then includes a portion of this silicon layer.
A reflecting layer is formed on the silicon layer on the back face of the substrate.
Each cathode is connected in series to a current modulator etched in the silicon layer.
An epitaxial growth of a silicon layer that encapsulates the germanium dots is then performed.
Conveniently the layer of aluminium is attached to the silicon layer by sputtering.
The amorphous silicon layer can advantageously be doped to improve its electrical performance.
Those who are less cross it and are absorbed by the silicon layer below.
The silicon layer may comprise single crystal silicon or it may comprise polysilicon.
The etching operation is completed when the underlying silicon layer is reached.
A silicon layer is deposited onto a substrate which is subsequently separated from the silicon layer.
The distribution of light in the thin polycrystalline silicon layer is also improved.
The detached porous silicon layer may then be crushed to yield porous silicon particles.
This decrease may be partly compensated by increasing the silicon layer thickness.
This layer may be a silicon layer of an SOI substrate covering a buried oxide layer.
This gave a black film on the surface of the porous silicon layer.
Only the zones of the polycrystalline silicon layer which are over the silica zones remain.
The emitter diffusion may take place through a second polycrystalline silicon layer.

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