Examples of 'silicon-germanium' in a sentence
Meaning of "silicon-germanium"
Silicon-germanium refers to a semiconductor material or alloy composed of silicon and germanium, commonly used in electronics and photonics applications
How to use "silicon-germanium" in a sentence
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silicon-germanium
According to an embodiment, the silicon-germanium regions are formed by condensation.
In this case, the selectively removable material may be a silicon-germanium alloy.
This multilayer stack will allow a silicon-germanium heterojunction base to be formed.
The lattice parameter is then identical to that of a particular silicon-germanium alloy.
Selective epitaxy enables the silicon-germanium film to be deposited only in the required areas.
Process for obtaining a transistor having a silicon-germanium gate.
Silicon-germanium area comprising carbon and dopants of the desired second conductivity type ;.
This multilayer will allow a base with a silicon-germanium heterojunction to be formed.
In particular, the epitaxial growth may be a growth of a mixed semiconductor such as silicon-germanium.
This multilayer stack must allow a base with a silicon-germanium heterojunction to be formed.
Silicon-germanium alloys are rapidly becoming an important semiconductor material for high-speed integrated circuits.
Method of wet cleaning a surface, especially of a material of the silicon-germanium type.
The first material is for example silicon-germanium and the second material is silicon.
For this purpose, it has in particular been provided to use as a base a silicon-germanium layer.
Removing the silicon-germanium by a selective etching with respect to the silicon and to the insulator.
See also
For a better understanding of this mechanism we studied different Silicon-Germanium base structures.
Silicon-germanium area comprising carbon ; and.
Preferably a pretreatment solution may be applied before this layer of silicon-germanium 2 is stripped.
Preferably, the silicon-germanium alloy layer is monocrystalline.
According to an embodiment, the doped semiconductor layer is a polycrystalline silicon or silicon-germanium layer.
Epitaxially growing in the second strip a silicon-germanium layer on the silicon layer ; and.
The present invention especially applies to the forming of transistors having a silicon-germanium base.
These contaminants may include oxides of silicon, silicon-germanium and / or residual components of the etching solution.
Various techniques may be used for the selective removal of this silicon-germanium alloy.
The method of claim 7, wherein the silicon-germanium regions are formed by condensation.
According to an embodiment, said absorbent layer preferably includes at least one silicon-germanium zone.
Similarly, the SOL layer may be a layer of silicon-germanium or of another semiconductor.
According to an embodiment, the material constituting at least said intermediate layer preferably comprises silicon-germanium.
The invention relates to a method for producing a silicon-germanium film for a field effect device.
Lastly, two silicon-germanium regions are produced by resuming epitaxy on the upper layer 7.
The temporary material is, for example, a silicon-germanium alloy.
It also permits silicon and silicon-germanium ( or simply germanium ) on insulator co-integration.
The different material 16 is for example layer of silicon-germanium alloy.
Equilibrium lattice constant of the silicon-germanium layer 12 depends directly on germanium content.
Upper portion 27 of the conductive gate stack is made of silicon-germanium.
The second layer 81 formed from silicon-germanium is then growth epitaxially.
On the silicon-germanium layer, a layer of silicon having a thickness of approximately 15 nanometers was deposited.
Sacrificial layer 13 is preferably made from silicon-germanium alloy SiGe.
This silicon-germanium layer must therefore be thick enough, but not too thick.
First filling material 16 is for example a material of silicon-germanium alloy type.
Silicon-germanium 2 preferably forms the channel of PMOS transistor 6.
At this stage of the method, it is desired to remove sacrificial silicon-germanium layer 7.
After this, silicon-germanium layer 3 is selectively etched.
The temporary material may, for example, be germanium or a silicon-germanium alloy.
The effect of a silicon-germanium ( SiGe ) channel is also studied.
According to the invention, an etching solution is used to remove the layer of silicon-germanium 2.
It moreover permits the creation of Silicon-Germanium on insulator ( SGOI ) structures.
The method of claim 1, wherein the substrate comprises an upper silicon-germanium epitaxial layer.
Superconductivity in germanium and silicon-germanium was predicted theoretically as early as in the 1960s.
Its development team were the first to present a 77 GHz radar chip using silicon-germanium technology.
