Examples of 'single-crystal silicon' in a sentence
Meaning of "single-crystal silicon"
Single-crystal silicon refers to a highly pure form of silicon that consists of a single continuous crystal lattice structure. It is used extensively in electronics, particularly for the fabrication of integrated circuits, due to its superior electrical properties. Single-crystal silicon is produced through various methods, such as the Czochralski process, which involves pulling a silicon crystal out of a molten silicon melt
How to use "single-crystal silicon" in a sentence
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single-crystal silicon
Method of deposition of a single-crystal silicon region.
Single-crystal silicon solar panels protected by polycarbonate casing.
Mechanical resistance of a single-crystal silicon wafer.
Single-crystal silicon solar cells have a uniform color.
Formation of single-crystal silicon carbide.
According to an embodiment of the invention, the silicon is a single-crystal silicon.
It should be recalled that single-crystal silicon exhibits crystalline anisotropy.
Single-crystal silicon solar cells are now widely available at low cost.
A case in point may be a single-crystal silicon element.
At the present time, photovoltaic cells are mainly manufactured from multicrystalline or single-crystal silicon.
The second layer is epitaxial single-crystal silicon on the first layer.
In addition, the subjacent third material is preferably a layer of single-crystal silicon.
Defining an active single-crystal silicon area delimited by a buried insulator layer ;.
Microfabrication technologies for single-crystal silicon sensors.
This involves the single-crystal silicon of the initial substrate 1 exposed by the deoxidation step.
See also
The substrate may be made of single-crystal silicon.
Generally, the single-crystal silicon substrate contains impurities that supply charges to silicon for imparting conductivity.
A recrystallization step turns the entire layer into single-crystal silicon.
These springs are made up of single-crystal silicon along diverse crystallographic axes.
According to an embodiment of the invention, the second material is single-crystal silicon.
Covered with a gate oxide layer the single-crystal silicon of the circuit surface ;.
The present invention relates to the manufacturing of semiconductor components from a single-crystal silicon wafer.
Dislocation-free and extremely flat single-crystal silicon wafers are required in the manufacture of computer chips.
In this last case, it is difficult to obtain a strict single-crystal silicon substrate.
Expensive single-crystal silicon wafers.
The assembly furthermore comprises a decoupling layer made of single-crystal silicon and comprising,.
First, the conductive single-crystal silicon substrate 1 will be described.
Such a dose is too low to amorphize the silicon which remains single-crystal silicon.
It is produced in the single-crystal silicon of the layer 3.
For example, the method is applied from two bulk source substrates in single-crystal silicon.
The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm.
Process for fabricating a network of nanometric lines made of single-crystal silicon and device obtained.
A structure in which single-crystal silicon layer 12 has a thickness under 1 um will for example be chosen.
Photovoltaic cells are nowadays mainly manufactured from single-crystal silicon or from polycrystalline silicon.
Generally, a single-crystal silicon substrate contains an impurity that supplies charges to silicon, and is conductive.
In addition, the individual components are advantageously made from single-crystal silicon and its oxide.
The substrate is single-crystal silicon having conductivity type P ;.
Semiconductor components are conventionally formed in single-crystal silicon layer 23.
Thus, the layer 3 of single-crystal silicon encapsulated in the dielectric material 116 is obtained.
Forming a porous silicon layer on a single-crystal silicon surface ;.
To obtain the single-crystal silicon layer 270, it must be transferred from an auxiliary donor substrate 30.
The Deal - Grove model works very well for single-crystal silicon under most conditions.
Advantageously, the semiconductor regions are monocrystalline, preferably based on single-crystal silicon.
Another method comprises creating, on a single-crystal silicon wafer, an insulator layer provided with an opening.
The light-emitting diode may be formed of single-crystal silicon.
The layer 3 including single-crystal silicon encapsulated in the dielectric material 116 is then obtained.
As the floating zone moves upward, a single-crystal silicon.
The substrate is single-crystal silicon having ( 111 ) crystallographic planes parallel to the plane of the substrate.
Dot B is encapsulated in a single-crystal silicon layer.
The optoelectronic device of claim 1, wherein the doped semiconductor substrate is made of single-crystal silicon.
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