Examples of 'source and drain regions' in a sentence
Meaning of "source and drain regions"
source and drain regions: a term commonly used in electronics to describe the regions in a field-effect transistor where current enters (source) and exits (drain)
How to use "source and drain regions" in a sentence
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source and drain regions
Source and drain regions are then formed.
The epitaxied regions form source and drain regions.
The source and drain regions may also be doped.
There is also a need to produce structured source and drain regions.
Method for doping source and drain regions of a transistor by means of selective amorphisation.
This second lateral spacer covers a part of the source and drain regions.
This approach imposes source and drain regions which are not in crystalline silicon.
This device is suitable for transistor geometries with metal source and drain regions.
The source and drain regions therefore also contribute in practice to this capacitive coupling.
The trench thus further defines the source and drain regions of the transistor.
The source and drain regions of a field effect transistor must be separately electrically contacted.
The second semiconductor regions may also be source and drain regions of the second transistor.
Growing the source and drain regions by epitaxy from the semiconductor material remaining in place.
The first semiconductor regions may be respectively source and drain regions of the first transistor.
Usually, source and drain regions are metallic.
See also
The regions IDD or LDS are doped more lightly than the source and drain regions.
Finally, the source and drain regions are formed.
An ion implantation is performed to form lightly doped source and drain regions 15.
As a variant, the source and drain regions may be doped by implantation.
Therefore, the temperature significantly gets lowered near the source and drain regions.
Source and drain regions formed in a first conductive or semiconductor layer ;.
Advantageously, this prevents the source and drain regions being opposite the gate.
Growing source and drain regions on the second semiconducting layer ; and then.
Wherein the conductive gate is self-aligned with respect to the source and drain regions.
Source and drain regions 3 and 5 are generally covered with a silicide contacting layer.
This invention relates to a field-effect transistor having structured, raised source and drain regions.
The source and drain regions are consequently self-aligned with respect to the tantalum silicide gate.
In other words, the transistor gate is not self-aligned with the source and drain regions.
The formation of the gate, source and drain regions of the transistor ; and.
FIG . 4 shows the formation of low resistivity accesses to the source and drain regions.
As previously, the structure comprises source and drain regions 2 and 3 and a gate insulation layer 4.
FIG . 3 shows a supplementary stage for implantation of source and drain regions.
In FIG . 6, the source and drain regions both have obtuse angles ANGO.
The silicon substrate is shown having p-conductivity and the source and drain regions having n+ conductivity.
Regions 31 form source and drain regions of transistor T i, j.
Additionally it is possible to effect a doping of the source and drain regions 140.
FIG . 2 shows a stage for implantation of source and drain regions in the substrate of FIG . 1.
On either side of the gate are formed source and drain regions ( S / D ).
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