Examples of 'thermal oxide' in a sentence
Meaning of "thermal oxide"
thermal oxide: This phrase refers to a thin layer of oxide that forms on a material, typically silicon, as a result of exposure to high temperatures in an oxidizing atmosphere. It is commonly used in the context of semiconductor manufacturing processes to describe the creation of an insulating layer on the surface of silicon wafers
How to use "thermal oxide" in a sentence
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thermal oxide
The thermal oxide substrate is placed in the chamber of a technological frame.
The front faces and rear faces of the plates are covered with thermal oxide.
Generally a thermal oxide is preferred because of its low interfaz trap density.
Layer 4 is for example a thermal oxide layer.
This thermal oxide can serve as a defect passivating layer in the surface region.
More preferably, this layer is thermal oxide.
Thinning down the thermal oxide layer down to a thickness capable of forming a gate insulator.
On a silicon substrate, a layer of thermal oxide is formed.
Thermal oxide incorporates silicon consumed from the substrate and oxygen supplied from the ambient.
Their ability to form a protective thermal oxide scale allows reducing oxidation kinetics of the materials.
Eliminating a central portion of the thermal oxide layer ;.
A thermal oxide OX is then grown on the surface of the substrate.
The removal of the protective thermal oxide layer ;.
Grow thermal oxide layer on silicon substrate ;.
Preferably, the etched surfaces are passivated by a thin layer of thermal oxide.
See also
Growing a thermal oxide layer on a first heavily doped polysilicon layer ;.
Advantageously, the dielectric material forming the substrate is a thermal oxide.
Typically, part of the thermal oxide on the plug is also removed.
However, it is difficult to strip oxide without significant loss of thermal oxide.
Also, here the valve has thermal oxide on the membrane as well.
Even more preferably, the surface is of silicon having a native or thermal oxide layer.
The stacked and thermal oxide structures are shown by the solid and dashed lines, respectively.
Furthermore, the passivation effect is comparable or even better than that of a thermal oxide.
She was especially set against the under-construction Thermal Oxide Reprocessing Plant component being opened.
The thermal oxide mask 52 is next removed by either wet etching or dry etching.
To determine the oxide etch rates, a wafer having thereon patterned thermal oxide is employed.
In an alternative embodiment, the thermal oxide layer 105 is retained before the AlSi is deposited.
Nm SiO 2 film is deposited by PECVD at the surface of the thermal oxide film.
Thermal oxide layer 16 is also formed on a substrate 12 using a technique known to the skilled person.
For this example, a 1 um thick thermal oxide is chosen.
In step ( 1 ), this thermal oxide is mixed with solid sodium hydroxide.
The front face 3 has also been treated to have a thermal oxide layer 4.
Thinning down the thermal oxide layer down to a thickness between 3 and 15 nm ;.
The purpose of this stripping is to slightly reduce the thermal oxide 210.
The thick thermal oxide 420 will block the formation of the cavities in the passivated área 402.
Moreover, dopant redistribution ( segregation ) into a growing thermal oxide can be a problem.
A thermal oxide layer may also be formed on plate P 201.
The method according to claim 32, the first insulating material being thermal oxide SiO 2.
This oxide is preferably a high temperature thermal oxide or HTO ( “ High Thermal Oxide ” ).
Forming, on a semiconductor support, a single-crystal semiconductor substrate with an interposed thermal oxide layer ;.
Typically, this step corresponds to etching 10 Å of thermal oxide over the full wafer.
A dielectric layer 131 is formed on the surface, for example made of thermal oxide.
Layer 5 - 1 may also be removed, and a thermal oxide may be grown.
Alternatively, passivation can be achieved with the growth of a dielectric layer 6, e.g. thermal oxide.
The substrates included tetraethylorthosilicate ( TEOS ) on Al-Si-Cu and thermal oxide over Al-Si-Cu.
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