Examples of 'transistors t' in a sentence
Meaning of "transistors t"
transistors t: Refers to the Transistor T, a specific type or model of transistor used in electronics
How to use "transistors t" in a sentence
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transistors t
All transistors T i then are in the on state.
The voltage VpolG is chosen in such a way that the transistors T 5 are common-gate biased.
The gates of transistors T are respectively connected to selection lines RefWL 1 and RefWL 2.
In particular, the threshold voltages of transistors T i are different.
The gates of transistors T 1 and T 2 are connected to a same conductive write control track WWL.
In particular, the threshold voltages of transistors T i are identical.
The gate of the two transistors T 3 and T 4 is controlled by the modulation signal MOD.
In this case, the respective sizes of transistors T k may be identical.
The two semiconductor transistors T 1, T 2 are mounted in series and connected up as a current limiter.
It is then possible to form one or several interconnection levels above the transistors T 1 and T 2.
The common node between the two transistors T 1 and T 2 is connected to each corresponding column.
The outputs of this translation stage are applied to the bases of the transistors T 2 and T 2 b.
The gates of transistors T 2 and T 3 are connected to each other at the output of inverter 7.
The operational amplifier comprises a current mirror circuit formed by the transistors T 1 and T 2.
The diodes here are made from bipolar transistors T 9, T 10 having a base connected to a collector.
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Transistors T 1 and T 2 are then not really off, and there is a simultaneous conduction.
These bias resistors are connected between the emitters of the transistors T 1 and T 2 and ground.
The access zones of the transistors T 11 and T 21 may thus be fully decoupled from each other.
When the negative threshold is reached for these voltages, the transistors T 3 and T 4 are blocked.
However the transistors T 1 and T 2 may be selected to be different.
In a non-limiting example, the transistors T are MOSFETs.
The gates of the transistors T 5, T 6 are connected to an input SIN of the cell.
According to a first embodiment of the invention, the two transistors T 1 and T 2 are installed in series.
The drains of transistors T 2 and T 3 are connected to each other at the gate of transistor T 1.
In steady state, the gate-source voltages of transistors T 3 and T 4 are positive and of same value.
Transistors T 1 and T 2 are for example identical to each other, to within manufacturing dispersions.
When the voltage between the anode and the cathode is positive, transistors T 1 and T 2 are conductive.
The other transistors T 1 i are off.
The output of the circuit BPMP is connected to the gates of the transistors T 1, T 2.
According to an embodiment, transistors T 3 and T 4 have the same characteristics.
This KL 15 signal is thus combined with the signals S i on the gates of the transistors T 1.
It is also possible to have transistors T 1 and T 2 having different dimensions.
The second storage means are made according to a similar scheme and comprise two transistors T 21, T 22.
The signal gp is low and thus transistors T 1 and T 2 are blocked.
The gates of transistors T 1 and T 2 are connected by six diodes, head-to-tail two by two.
A second reading is performed using transistors T 2, T 3 to the reading bus BUS.
The circuit LTCGk connects the line 13 to the line CLk via two parallel-connected transistors T 1, T 3.
In this example, the NMOS transistors T 3 and T 4 are of the same size.
Two transistors T 1 and T 2, which are arranged as a differential pair ;.
The differential amplifier comprises two bipolar transistors T 1, T 2 mounted in common emitter configuration.
Transistors TX 2, TX 3 are controlled to enhance switching of transistors T 2, T 3 of the second switches.
The signal E 1 for its part is equal to zero and the transistors T 1, T 4 are turned off.
The emitters E of the two transistors T 1, T 2 are linked by two feedback impedances in series.
The connections 4 a 1 and 4 a 2 respectively connect gates of the access transistors T 1 and T 2 to a word line WL.
This imposes using transistors T 1 and T 3 of large dimensions, and thus expensive.
The term “ front face ” means the face on which the transistors T 1 and T 2 are arranged.
The gates of PMOS transistors T 1 and T 2 are connected via floating gate portion 7.
It is then simple to form matched transistors T 3 i and T 3 i ′.
The first and second transistors T 1, T 2 receive the variable voltage setpoint Vcons on their gate.
This memory point comprises, as previously, two transistors T 1 and T 2.
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