Examples of 'type transistor' in a sentence
Meaning of "type transistor"
Type transistor: A type of semiconductor device used for amplification or switching electronic signals
How to use "type transistor" in a sentence
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type transistor
It may also be an open base NIPIN type transistor.
The function of the PNP type transistor is similar to that of the NPN type.
A first current source connected to the source of the second N type transistor to bias same.
Method of producing a MOS type transistor is also proposed, comprising at least the steps of,.
The transistor is preferably an NPN type transistor.
This stage comprises an NPN type transistor T2 connected as a common emitter with a resistor R4.
Transistor according to the invention may be an NMOS or a PMOS type transistor.
Process for controlling at least one LGBT type transistor enabling its operation under irradiation.
The residual parts are used as spacers on the flanks of a FinFET type transistor gate ;.
First level comprising at least one n-MOS type transistor formed in a silicon semiconductor layer ;.
The circuit according to claim 1, wherein the first precharging transistor is an N type transistor.
However, the intrinsic voltage drop caused in the N type transistor is generally equal to 2 volts.
The electronic device according to claim 11, wherein it includes a depletion MOS type transistor.
An N type transistor 28 is connected between the control gate of the transistor 16 and ground.
A memory according to claim 8, wherein the first N type transistor is a native transistor.
See also
Second P-channel type transistor P 4, connected as a current mirror with the first plurality of transistors ;.
This transistor T2 is also a bipolar type transistor.
The control gate of the second N type transistor 19 is connected to the test control terminal 7.
One input end is connected to a base of an NPN type transistor Tr1.
First N-channel type transistor N 5, connected as a current mirror with the second plurality of transistors ; and.
The transistor Tr7 constitutes a second current mirror circuit together with an NPN type transistor Tr6.
The tunnel effect transistor 200 is here an N type transistor comprising a PiN diode architecture including,.
FIG . 5 represents the current / voltage characteristic of an LGBT type transistor.
In a preferred embodiment, another P type transistor 18 is made in addition.
Typically, switch 70 is preferably made from a P channel MOS type transistor.
The device 48 can be a NPN type transistor as shown in Fig.
In the example shown, the reference transistor T0 is a P type transistor.
FIG . 4 gives a schematic view of a P type transistor according to the invention.
Typically, switch 69 is preferably made from an N channel MOS type transistor.
The third N type transistor T3 ( or T6 ) is on and the capacitor gets discharged through this transistor.
Its drain is connected to the drain of the N type transistor M4.
Preferably, the second PMOS type transistor 12 and the reference transistor 19 will be resistive.
The read circuit according to claim 11, wherein the second N type transistor is a native transistor.
An N type transistor 71 is parallel-connected to the diode-mounted transistor 7.
As previously, the tunnel effect transistor 600 is here an N type transistor comprising a PiN diode architecture.
The P type transistor M2, which therefore receives a voltage close to 12 volts at its gate, is off.
FIG . 3 shows a useful part of a characteristic curve of a P type transistor mounted as a diode ; and.
An NPN type transistor T1 having its base connected to the point 42 ;.
In the example, the transistor T6 is a native P type transistor.
A P channel MOS type transistor 51 is used to impose the potential VCC at the output 52.
The output 29 is connected to the source of a first PMOS type transistor 11.
An N channel MOS type transistor 56 is used to impose the potential GND on the output 52.
A circuit according to Claim 17, characterised in that the said biasing means include a MOS type transistor ( Q6 ).
The output of the comparator C2 feeds, through a resistor 19, the base of the NPN type transistor T1.
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