Examples of 'amorphous semiconductor' in a sentence
Meaning of "amorphous semiconductor"
amorphous semiconductor - a type of semiconductor material that lacks a crystal lattice structure and has non-specific arrangement of atoms
How to use "amorphous semiconductor" in a sentence
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amorphous semiconductor
The amorphous semiconductor material produces persistence.
This channel consists of an amorphous semiconductor material.
The amorphous semiconductor regions can be made of silicon.
A method of reducing the localized states of the amorphous semiconductor layer.
Etching the layer of amorphous semiconductor through the aperture.
This equilibrium density corresponds to the defect density of a perfectly intrinsic amorphous semiconductor.
An amorphous semiconductor layer is suitable for the semiconductor layer.
Breakthroughs have been made in preparing amorphous semiconductor materials of electronic device quality.
The present invention relates to a PIN photodiode formed from an amorphous semiconductor.
The principal method of preparing these amorphous semiconductor materials is glow discharge deposition.
Depositing at least one first metallization area on at least the first amorphous semiconductor layer ;.
Heating the amorphous semiconductor film to form a crystallized semiconductor film;.
The oxide semiconductor can include at least one of an amorphous semiconductor or a polycrystalline semiconductor.
The first amorphous semiconductor region 6 is connected to at least one first metallization area 9.
The components forming the matrix are produced from an amorphous semiconductor material that produces persistence.
See also
Then, a first amorphous semiconductor layer 13 doped with a first type of conductivity is deposited.
The crystalline semiconductor material is crystalline silicon and the amorphous semiconductor material is amorphous silicon.
A layer 4 of doped amorphous semiconductor material such as n+ doped silicon ;.
PIN photodiode formed from an amorphous semiconductor.
These amorphous semiconductor regions 6, 7 a, 7 b form an interdigitated structure.
Xerographic measurements involve corona charging the surface of an amorphous semiconductor film to a voltage Vo.
Removing areas of the first amorphous semiconductor layer not covered by the first metallization area ;.
A fifth phase of depositing a fourth undoped amorphous semiconductor layer ;.
Thus, the first intrinsic amorphous semiconductor layer 114 a provides electrical isolation between the lower electrodes 112.
A second step involving deposition of undoped amorphous semiconductor material ;.
Forming a second layer of amorphous semiconductor material on the barrier layer, and.
A twelfth step of deposition of a layer of undoped amorphous semiconductor material ;.
A second step of deposition of a layer of amorphous semiconductor material doped with a predetermined first type ;.
The first metallization area 9 at least partially covers the first amorphous semiconductor region 6.
Forming a second layer 5 of amorphous semiconductor material on first layer 2.
At least one second metallization area in contact with the second amorphous semiconductor region ;.
Forming a fourth layer 8 of amorphous semiconductor material on third layer 6.
Depositing at least one second metallization area on at least the second amorphous semiconductor layer ;.
Deposition of a doped amorphous semiconductor layer ;.
A fourth step involving deposition of a layer of doped amorphous semiconductor material ;.
Deposition of an undoped amorphous semiconductor layer ;.
Producing a second insulating layer in the second window and on the first amorphous semiconductor layer ;.
Second layer made from doped amorphous semiconductor material 3.
The deposition of second metallization areas 10 a, 10 b is then performed on the amorphous semiconductor layer 17.
A fourth phase of depositing a third doped amorphous semiconductor layer of a second given type ;.
The semiconductor substrate 1 also comprises, on the surface 3, at least one second amorphous semiconductor region 7 a, 7 b.
A second phase of depositing a first doped amorphous semiconductor layer of a first given type ;.
A third phase of depositing a second undoped amorphous semiconductor layer ;.
A sixth phase of depositing a fifth doped amorphous semiconductor layer of the first given type ;.
A fourth step involving deposition of an n-type doped amorphous semiconductor layer ;.
The photodiode as claimed in claim 1, wherein said undoped amorphous semiconductor is hydrogenated amorphous silicon.
A third step of deposition of a layer of undoped amorphous semiconductor material ;.
A first step involving deposition of a layer of n+ doped amorphous semiconductor material ;.
A fifth step involving deposition of a layer of doped amorphous semiconductor material ;.
A sixth step involving deposition of a layer of undoped amorphous semiconductor material ;.
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