Examples of 'deposition temperature' in a sentence
Meaning of "deposition temperature"
Deposition temperature is the temperature at which a material is deposited during a manufacturing process, such as in thin-film deposition techniques like chemical vapor deposition or physical vapor deposition
How to use "deposition temperature" in a sentence
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deposition temperature
The minimum deposition temperature is ambient temperature.
The structure of the insulator is compromised by the low deposition temperature.
Deposition temperature affects chemical composition to a very low extent.
The key parameters are the deposition temperature and annealing stage.
The deposition temperature is correlated to the choice of the precursors.
It is advantageous to choose the initial deposition temperature in one of the above ranges.
The deposition temperature will depend on the material deposited.
The unidimensional patterning with hills and grooves shows a tunable period through the deposition temperature.
Annealing at the deposition temperature and at the same sputtering pressure.
Based on this equation, the rate of polysilicon deposition increases as the deposition temperature increases.
This minimum deposition temperature may be a function of the pressure within the enclosure.
However, SiO has a very high vapor pressure despite its high deposition temperature.
The platinum deposition temperature also influences the properties of the perovskite material.
First, PECVD allows for a much lower deposition temperature and pressure.
Deposition temperature is also selected that is sufficient so that the gaseous precursor can dissociate.
See also
Moreover, the carbon quantity in the CBN increases with the deposition temperature.
Raising the deposition temperature reduces the slope because the planarizing material will flow better.
FIG . 7 a shows the dependence of PZT polarization switching fatigue on the platinum deposition temperature.
However, higher deposition temperature resulted in low leakage current.
Deposition temperature and post annealing can control silicon dioxide ( SiO2 ) film stress.
The equilibrium composition at deposition temperature has a two phase Y / a structure.
The deposition temperature is appropriate to the choice of precursors, in particular the amine.
In this case, the SiO solid deposition temperature is usually not lower than about 300°C.
The deposition temperature on the filter surface was measured to be 45 °C.
The deposition temperature for this dielectric is frequently above 600°C to obtain adequate throughput.
The deposition temperature is identical between the samples and equal to the first deposition temperature ( T 0 ).
At the deposition temperature of 50°C, the alcohol slowly evaporates, resulting in an increased vesicle size.
The deposition temperature was 645 ° C. and the time necessary for performing deposition was approximately 1 hour.
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