Examples of 'doped semiconductor' in a sentence
Meaning of "doped semiconductor"
doped semiconductor - Refers to a semiconductor that has been intentionally altered in order to modify its electrical properties
How to use "doped semiconductor" in a sentence
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doped semiconductor
The doped semiconductor then contains less defects.
This invention relates to rare earth doped semiconductor lasers.
The doped semiconductor may be ground into a powder to serve as a support.
The conduction layer may comprise or consist of an n doped semiconductor material.
Solar cell having doped semiconductor heterojunction contacts.
The same technique may be used for forming a doped semiconductor film.
Solar cell having doped semiconductor heterojunction contacts and method for its fabrication.
The process according to the invention makes it possible to deposit doped semiconductor layers.
Doped semiconductor substrate of a first conductivity type ;.
This embodiment is particularly adapted for materials of metallic type or heavily doped semiconductor materials.
Providing a doped semiconductor substrate of a first conductivity type ;.
Doped granules may also be doped by forming the granules from already doped semiconductor powders.
Preferably, said doped semiconductor material is doped silicon.
The annular wave guide is made of a doped semiconductor material ;.
First layer of a doped semiconductor material of a first conductivity type ;.
See also
Advantageously, the bottom waveguide is made of a highly doped semiconductor material.
Second layer of a doped semiconductor material of a second opposite conductivity type ;.
According to an embodiment, the filling material is an in-situ doped semiconductor material.
A negatively doped semiconductor coating covering a part of each of said first electrodes ;.
The alloy of rough surface 4 can also be a doped semiconductor alloy.
A highly negatively doped semiconductor coating covering said intrinsic semiconductor coating ; and.
According to an alternative, the substrate is made from a doped semiconductor material.
According to an embodiment, the doped semiconductor layer is a polycrystalline silicon or silicon-germanium layer.
The conduction layer 2 can be made of or comprise a doped semiconductor material.
Biasing the doped semiconductor substrate and the first doped well to a reference voltage ;.
Diluted magnetic semiconductors ( dms ) are composed by a transition metal ion doped semiconductor.
Generally the quantity of dopant exhibits in the doped semiconductor represents approximately 1 % of the atoms.
The n doped semiconductor layer 4 is for its part produced on part of the middle layer 3.
According to an embodiment of the present invention, the powders are doped semiconductor powders.
Doped semiconductor absorption layer for said radiation, capable of converting said radiation into charge carriers ;.
According to an embodiment, the upper portion comprises a portion of a doped semiconductor layer.
Doped semiconductor substrate of a first conductivity type, the substrate comprising first and second opposite surfaces ;.
The resistive layer is for example a metal layer, or a doped semiconductor layer.
Doped semiconductor materials of the IV group ;.
Reflective layer located underneath the first doped semiconductor layer ; and.
First doped semiconductor layer ;.
Doped buried layer of a second conductivity type overlying the doped semiconductor substrate ;.
A first doped semiconductor layer of a III-V or II-VI compound, of a first conductivity type ;.
The second conductive material of upper gate portion 7 may be a doped semiconductor material.
An N-type doped semiconductor layer 81 extends on an insulating layer, not shown.
The method of claim 5, wherein the middle portion comprises a portion of a doped semiconductor layer.
The method of claim 21 including depositing a doped semiconductor as the electrically-conducting material.
The device of claim 6, wherein the semiconductor material ( 14 ) comprises a doped semiconductor.
The optoelectronic device of claim 1, wherein the doped semiconductor substrate is made of single-crystal silicon.
Second end surface 40 is preferably a surface área of a thick heavily n doped semiconductor layer 44.
Protection structure 10 comprises a plurality of doped semiconductor regions formed in substrate 12.
First end surface 38 is preferably a surface área of a thick heavily p doped semiconductor layer 42.
The method of claim 1 wherein step a comprises introducing a doped semiconductor source material into the feeder.
Deep implanting an N-type doped insulating well into the P-type doped semiconductor substrate ;.
A tenth step of deposition of a layer of n-type doped semiconductor material ;.
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Gillon doped him in the last fight
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I am a little doped to stay there that long
