Examples of 'doped silicon' in a sentence
Meaning of "doped silicon"
doped silicon - In the field of semiconductor technology, doped silicon refers to silicon material that has been intentionally mixed with specific impurities to alter its electrical properties. This process is crucial for creating transistors, diodes, and other semiconductor devices in the electronics industry
How to use "doped silicon" in a sentence
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doped silicon
Said substrate may for example be doped silicon.
Production of doped silicon and medical and industrial radioisotopes.
The layer to be heated may be lightly doped silicon.
Doped silicon oxide.
The substrate is preferably a highly doped silicon substrate.
The growth of a doped silicon layer by vapor deposition is a known silicon process.
Examples of suitable doped ceramics include doped silicon carbides.
This makes doped silicon exceptionally suitable for use in applications with high electrical loads.
The piezoresistive gauges used in the invention can be made of doped silicon.
Etching doped silicon to delimit it laterally ;.
The laser beam energy melts an amount of doped silicon at the bond site.
N-type doped silicon is a much better conductor than pure silicon is.
Thin layer of a conductive transparent oxide deposited on the thin polycrystalline doped silicon layer and.
Eliminating said doped silicon through the passage ; and.
CEN obtains access to the largest market for neutron doped silicon.
See also
However, the highly doped silicon bridge has two peaks.
The two semiconductors can thus be comprised of N and P doped silicon.
In this work, strongly phosphorous doped silicon samples are studied.
According to an embodiment, the silicon support is made of doped silicon.
Depositing a doped silicon layer ; and.
Preferably, the resistive coating is of doped silicon.
Doped silicon support ;.
Preferably, said doped semiconductor material is doped silicon.
In a p-type doped silicon substrate, the free charge carriers are holes.
Currently, most semiconductor diodes use doped silicon or germanium.
The highly doped silicon film 32 was used for confinement of the fracture.
We first studied titanium nitride / highly doped silicon contacts.
The highly doped silicon film 32 will act as the inclusions zone.
The substrate 2 may be an insulator, or a semiconductor such as intrinsic or doped silicon.
Control of the gate is normally obtained with a doped silicon substrate covered with SiO 2.
In this case, the resistive material is advantageously an appropriately doped silicon.
The doped silicon is shaped as a tube, and the doping can be n-doped or p-doped.
The electrically conductive material 10b could be doped silicon or semiconductors.
Thus, the doped silicon only persists underneath the grid and above the oxide ( FIG . 6b ).
Process according to claim 1, wherein the layer contains doped silicon of the n type.
Plasma back-etch the boron doped silicon layer to a depth of 1 micron using Mask 5.
B2 the patterns are transferred by dry etching into a part of the doped silicon layer.
Metallization 48 in contact with doped silicon support 31 is formed on the lower surface of wafer 30.
The method of claim 2 wherein the semiconductor source material comprises doped silicon.
This example considers a substrate made of n-type doped silicon 12, for example doped with phosphorous.
An electrophoresis method according to claim 23 wherein the electrically resistive material is doped silicon.
Example materials include Ag-AgCl, Au, Pt, or doped silicon or other semiconductor materials.
As a consequence, the various doped zones constituting the substrate are formed from doped silicon material.
The nano-elements will generally also be made of doped silicon like the substrate 100.
A semiconductor bridge comprises a non-metallic substrate that carries a semiconductor layer, preferably comprising a doped silicon.
Then, a protection resin is deposited on the doped silicon layer 71.
Solar cell of claim 8, wherein the substrate is an electrically conductive material, preferably a doped silicon.
Next, another wafer 164 of appropriately doped silicon is provided.
In one preferred embodiment, the intermediate layer comprises a mixed oxide, preferably a doped silicon oxide.
Layer 29 is for example made of boron and phosphorus doped silicon oxide ( BPSG ).
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