Examples of 'etching using' in a sentence
Meaning of "etching using"
A technique of creating designs on a hard surface, typically using acids to cut into the surface
How to use "etching using" in a sentence
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etching using
Wet etching using appropriate solvents is a further option.
This etching is a chemical etching using a hydrofluoric acid solution.
The opening may be formed by a method such as etching using a mask.
It may be chemical by etching using a solution that attacks the material to be thinned.
This hole can also be made by anisotropic etching using a plasma.
High quality etching using the Lumiplas system.
The texture is applied to the mould surface by acid etching using a resist.
The etching may be an acid etching using a combination of acid and water.
This removal may for example be done by chemical etching using HF.
The release can be obtained by etching using hydrofluoric acid vapour.
Further wet etching using KOH is used to fine tune the dimension of the nanocolumns.
This etching is advantageously performed by wet process etching using an acid etching solution.
Further wet etching using KOH may fine tune the dimension of the nanocolumns.
Definition of the mesa by chemical etching using a resin mask ;.
Etching using a mask, the active layer is reduced to a mesa.
See also
Preferably an anisotropic wet etching using potassium hydroxide KOH is used.
Method according to claim 6, further comprising forming the pattern by photolithographic etching using the mask.
The oxide layer 3 is removed by etching using a hydrofluoric acid solution.
This etching can be carried out by reactive ionic etching using SF6.
The second plasma etching involves etching using a fluorine-containing plasma, without Argon and diluted with Helium.
Finally, the temporary substrate was removed by etching using an NaOH solution.
It may be an etching using a sulfur hexafluoride plasma ( SF 6 ).
The etching is advantageously a chemical etching, typically a chemical etching using a bromine solution.
This pattern 54 is obtained by etching using the delimited sensitive material 52 as a mask.
Alternative etching methods comprise an oxalic acid / sulfuric acid etch, or etching using hydrochloric acid.
The second etching is a microwave etching using reactive gases such as Ar, SF6 and O2.
For example, this etching takes place by means of reactive ionic etching using SF6.
This etching is a reactive ionic etching using CHF3 plasma.
The SiO 2 crust is then optionally removed by plasma etching using a fluorinated gas.
Fabrication of Si nanopillars by reactive ion etching using self-organised masks.
This is carried out by reactive ionic etching using SF6 as the etching agent.
The square 48 is then eliminated by etching using the second etchant.
This embodiment was applied to silicon film etching using halogen-based gas NF3.
The sacrificial layer 117 may be removed for example by etching using a TMAH solution.
The first network ( 5 A ) of conductive tracks is defined by traditional etching using a second lithographic mask.
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Etching of plastic substrates prior to their metalization
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Etching of plastic substrates prior to their metallization
