Examples of 'p-doped' in a sentence
Meaning of "p-doped"
P-doped refers to the process of introducing impurities into a semiconductor to enhance its electrical properties
How to use "p-doped" in a sentence
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p-doped
A p-doped semiconductor is relatively conductive.
Diborane can be used in order to obtain p-doped silicon nanowires.
The p-doped zone is a semiconductor obtained by the method described above.
Preferably the charge layer is made from p-doped silicon.
The p-doped silicon substrate is thus covered with an n-doped silicon nitride layer.
Most of the applications use piezoresistive gauges based on p-doped silicon.
The structural layer is especially an n - or p-doped semiconductor stack of pin structure.
It should be entertaining to follow the race to make and test a p-doped version.
A typical solar cell includes n-doped and p-doped regions fabricated on a silicon substrate.
The invention relates to production of a semiconductor layer made from n-doped or p-doped GaN.
P-doped vertical confinement layer positioned to cover the active zone and the substrate;.
These conditions provided for the deposition of a microcrystalline layer of p-doped silicon alloy material.
It is formed by a heavily p-doped quaternary contact material of type 2.
Each pixel on that sensor is represented by a P-doped mos capacitor.
A highly p-doped semiconductor zone.
See also
The first doped zone is advantageously P-doped by arsenic atoms.
A p-doped indium phosphate top confinement layer 2 is then grown.
Advantageously, said single substrate may be p-doped.
In alternative manner, it is possible to use a p-doped semiconductor material layer 1 b.
Finally, p-doped silicon substrates can be made porous without illumination.
For example, a configuration could consist of p-doped and n-doped germanium.
The p-doped layer 3 is made such that it surrounds the active zone 4.
The materials of the contact regions can be primarily n-doped or p-doped.
A third step of growing a p-doped alloy layer on said active layer, and.
P-doped GaN layer, formed on the GaN layer which is not intentionally doped ;.
It is placed between two injection layers, a p-doped layer and an n-doped layer.
The doped silicon is shaped as a tube, and the doping can be n-doped or p-doped.
The n-doped region is separated from the p-doped region by a separation region.
The deposition of a p-doped organic layer 6 suitable for the injection and transport of holes ;.
One coating of silver is applied to the non-doped or p-doped surface of the collector 6.
An upper organic layer 7 of p-doped material O 2 is deposited on this organic electroluminescent layer 5.
In this case, the Mott insulator is called n-doped or p-doped respectively.
It will be noted that P-doped area 2 may also be obtained by other techniques,.
According to a particular embodiment, the optical cavity comprises a P-doped region and an N-doped region.
Step 5, Production of the P-doped vertical confinement layer by means of a third epitaxial growth ;.
Ledes are constructed out of suitably N - and P-doped semiconductor material.
Highly p-doped electrical contact layer P 3, for example made of GaAs.
This emitter 45 includes a p-doped semiconductor element.
The silicon substrate may be n - or p-doped.
This external well contains another P-doped well 155 for the construction of an N type MOS.
The material comprising the p-Ge 3 crystal is p-doped germanium.
Layer 3 made of p-doped semi-conductor material.
P-doped vertical confinement layer ;.
The second layer is a p-doped absorbing layer 22.
A device according to claim 25, wherein a portion of the active layer is p-doped.
The confinement layer 6 is made of p-doped InP, for example.
Second, p-doped GaN layer formed on top of the first GaN layer ;.
In a variant, the crystalline silicon may be p-doped and / or n-doped silicon.
A p-doped InP cavity 4 rests on the layer 1 and is delimited by a dielectric layer 5.
Finally, the second electrode 6 is made by covering the p-doped layer 3.
