Examples of 'phase epitaxy' in a sentence

Meaning of "phase epitaxy"

phase epitaxy: A process in material science and engineering involving the growth of thin films or crystals in a controlled manner, typically for semiconductor devices

How to use "phase epitaxy" in a sentence

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Advanced
phase epitaxy
Liquid phase epitaxy is a growth procedure in solution.
These scintillators are grown on a substrate by liquid phase epitaxy.
Two groups of vapour phase epitaxy methods are known.
Sample fabrication was performed by metalorganic vapor phase epitaxy.
Liquid phase epitaxy.
Characterization of homoepitaxial gallium nitride grown by hydride vapor phase epitaxy.
Solid phase epitaxy.
Organometallic vapour phase epitaxy.
Generally liquid phase epitaxy is used for producing such structures.
Reactor for vapor phase epitaxy.
Liquid phase epitaxy is one of the most widely used methods for producing monocrystalline layers.
Metalorganic vapor phase epitaxy.
A reactor for vapour phase epitaxy on one face of at least one substrate, comprising,.
These were used to grow GaAs nanopillars on GaAs using metalorganic vapour phase epitaxy.
In a variant, a liquid phase epitaxy technique could be used.

See also

The growth may for example be carried out in a standard liquid phase epitaxy jig.
Liquid phase epitaxy ( LPE ) is preferably used.
Hydrogen purifiers are used in metalorganic vapour phase epitaxy reactors for LED production.
Field of the Invention The present invention relates to an apparatus for vapour phase epitaxy.
Vapor phase epitaxy ( VPE ) by the chlorides method ;.
Advantageously, the vertical confinement layer is deposited by vapor phase epitaxy.
Solid-phase ===Solid Phase Epitaxy (SPE) is a transition between the amorphous and crystalline phases of a material.
According to a variant, the film can be deposited by liquid phase epitaxy.
In the early 1960s liquid phase epitaxy ( LPE ) was invented by Herbert Nelson of RCA Laboratories.
In the present invention, the second epitaxy can be a vapour phase epitaxy.
The method used is liquid phase epitaxy ( LPE ).
As stated hereinbefore, the active laser material is obtained by liquid phase epitaxy.
Fraunhofer Institute 's metalorganic vapour phase epitaxy ( MOVPE ) reactor.
In this document, the thin layer is preferably made by liquid phase epitaxy.
Formation of a double heterostructure by liquid phase epitaxy ( FIG . 1 ), which comprises,.
However, the monocrystalline layer of saturable absorbent material is preferably obtained by liquid phase epitaxy.
The laser emitter of FIG . 3 is obtained by liquid phase epitaxy of the layers 4 and 12.
In all of cases, all the films can be obtained by liquid phase epitaxy.
A process according to claim 1, wherein the second epitaxy is a vapour phase epitaxy.
The unfinished element of the transistor 1 is then placed under vapor phase epitaxy conditions.
For example, the thickness of the thin layer 5 may be increased by gaseous phase epitaxy.
The nanowires were grown via the vapor-liquid-solid mechanism in a metalorganic vapor phase epitaxy device.
The useful layer is advantageous made on the substrate 11 by a so-called liquid phase epitaxy technique.
Second type of deposit, deposition of a film by liquid phase epitaxy ( LPE ).
The method commonly used is chloride and hydride vapor phase epitaxy ( HVPE ).
According to a second placing method, the thin film is obtained by liquid phase epitaxy ( LPE ).
According to a second embodiment variant, step ( 3 ) may be carried out by vapor phase epitaxy ( CVD ).

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