Examples of 'epitaxy' in a sentence
Meaning of "epitaxy"
Epitaxy refers to the process of depositing a crystalline overlayer on a crystalline substrate, with the overlayer maintaining the same crystallographic orientation as the substrate. This precise alignment is crucial in semiconductor manufacturing and thin film deposition
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- An overgrowth in which the overlying crystal is either induced into the same orientation, or otherwise grows under the influence of the underlying crystal into the same orientation.
How to use "epitaxy" in a sentence
Basic
Advanced
epitaxy
Epitaxy is used in nanotechnology and in semiconductor fabrication.
The possibility of epitaxy above the grid.
Epitaxy of gallium nitride films on silicon substrates.
The layers undergo epitaxy on a InP substrate.
Epitaxy reactor having an improved gas collector.
The layers undergo epitaxy on a GaAs substrate.
The layers are deposited by a standard method of epitaxy.
Liquid phase epitaxy is a growth procedure in solution.
It is then possible to deposit a silicon layer by epitaxy.
Molecular beam epitaxy is an advanced form of thermal evaporation.
These layers may also be deposited by epitaxy.
Atomic layer epitaxy and aluminium oxide films.
The second semiconducting portions may be fabricated by epitaxy.
Then the resumption of epitaxy is undertaken on the substrate.
Epitaxy is carried out at atmospheric pressure.
See also
Several different epitaxy techniques are known.
Epitaxy can then be resumed in these cleaned cavities.
These scintillators are grown on a substrate by liquid phase epitaxy.
After this an epitaxy of silicon is undertaken on the substrate.
Growth is performed by the molecular beam epitaxy technique.
The drawback to epitaxy technologies is that they are costly.
Such a structure can be produced by molecular beam epitaxy.
Part of the epitaxy may not be directed downwards.
The stacks are defined as of the first operation by epitaxy.
A resumption of epitaxy makes it possible to bury the channel.
The problem is to dope the photodetection after epitaxy.
The material SiGe is deposited by epitaxy on silicon substrates.
Another problem arises in the course of selective epitaxy.
Two groups of vapour phase epitaxy methods are known.
This growth is particularly a growth by epitaxy.
Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate.
Reactor for vapor phase epitaxy.
This precaution enables an epitaxy resumption of better quality to be obtained.
The deposition technique can be epitaxy.
An epitaxy of a semiconductor material layer on the substrate surface and.
All or part of this structure may be obtained by epitaxy.
Epitaxy is a critical process in the creation of new semiconductor materials.
The drawbacks related to a thick epitaxy are thus avoided.
Growth is performed by epitaxy in vapor phase by means of organometallic precursors.
In situ doping may be done during epitaxy.
The use of chlorinated chemical epitaxy results in selective growth.
This epitaxy may be conducted in liquid phase or gas phase.
A different technology to create single crystalline materials is called epitaxy.
Selective epitaxy of the component in the openings of the mask.
Donor substrate was prepared by growing a layer of germanium on silicon by epitaxy.
Cell for epitaxy by molecular beams and associated process.
They were found in many samples grown by molecular beam epitaxy.
Such a step of SiGe epitaxy is conventional and known per se.
Deposition of tin dioxide thin films by atomic layer epitaxy.
Molecular beam epitaxy was used in the very beginning.
