Examples of 'polysilicon layer' in a sentence
Meaning of "polysilicon layer"
polysilicon layer: A thin layer of polycrystalline silicon used in semiconductors and solar cells to enhance their efficiency and conductivity
How to use "polysilicon layer" in a sentence
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polysilicon layer
The polysilicon layer is doped with boron.
The transistor gates are formed in a polysilicon layer.
The polysilicon layer can be doped with boron.
The second sacrificial layer is then partially covered by a polysilicon layer.
It is also preferred that the polysilicon layer is an undoped polysilicon layer.
This resonant evanescent wave propagates longitudinally in the polysilicon layer.
The polysilicon layer was then selectively etched using aluminum as an etch mask.
The doping is then performed before reetching the upper polysilicon layer.
A polysilicon layer is then deposited on the planarized mixed surface and then polished.
The deposition of a silicon nitride layer and of a polysilicon layer is then performed.
The polysilicon layer is insulated from the first layer metal by a first insulating layer.
These spacers are formed by depositing a thin silicon nitride layer followed by a polysilicon layer.
Making a contact with the base polysilicon layer and a contact with the emitter polysilicon layer.
The gate oxide is surmounted by a gate stack comprising a metal layer and a polysilicon layer.
Depositing an emitter polysilicon layer and etching this layer ;.
See also
A polysilicon layer 9 has then been deposited over the entire structure.
Thus, a good distribution of the arsenic is encouraged in the polysilicon layer 9.
Etching the polysilicon layer to delimit a polysilicon portion therefrom ;.
In one embodiment of the invention, the polysilicon layer is doped with arsenic.
Forming a polysilicon layer over the entire integrated circuit ; and.
In one embodiment of the present invention, the first polysilicon layer is comprised of SiGe.
Alternatively, the polysilicon layer can be doped in situ during deposition.
The gate, and thus the trenches, have then been completed with a polysilicon layer.
It may also be a polysilicon layer or be counter-doped in comparison to the semiconductor.
Each cell of the power MOS transistor TP includes a gate 12 formed by a polysilicon layer.
The polysilicon layer comprises a doping species in order to confer on it conductivity of p+ type.
Eliminating the first heavily-doped polysilicon layer in a central portion thereof ;.
The porous polysilicon layer is formed by a process that forms nano-structures, such as anodization.
In another embodiment of the present invention, the first polysilicon layer is a heavily doped N+ layer.
Depositing a polysilicon layer doped of a second conductivity type and an insulating layer ;.
The support structure and the element SMM 2 a are produced by anisotropically etching this polysilicon layer.
Depositing an emitter polysilicon layer to form a second electrode of the capacitor, and.
Depositing an N-type doped polysilicon layer.
The porous polysilicon layer 6 oxidized by the rapid thermal oxidation has many grains having nano-structures.
Depositing an N-type emitter polysilicon layer.
Preferably, the polysilicon layer is formed by the use of LPCVD process.
This semiconductor substrate T is provided with a control gate GC, made of a second level polysilicon layer.
The P+ polysilicon layer is intended to form the extrinsic base of the transistor later.
The upper portion of the gate comprises a polysilicon layer 14.
Advantageously, the polysilicon layer is of n+ type conductivity.
Transistor TL includes a gate 21 formed by a polysilicon layer.
First polysilicon layer 18 is a heavily doped layer.
The thin oxide 7 is the gate dielectric, and polysilicon layer 9 is conducting.
A third polysilicon layer 52 is then deposited and doped.
The etching is then interrupted so that there remain fingers 4 of polysilicon layer 3 in trenches T 2.
In both cases, the polysilicon layer 5 acts as a gate.
A polysilicon layer 20 is then grown as in the previously described embodiments.
The optimum thickness of the polysilicon layer is about 0.1 µm in this case.
The polysilicon layer 35 is advantageously surmounted by a protective layer 36 made of silicon nitride.
After defining the active areas, a polysilicon layer 13 for forming the base contacts is deposited.
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Examples of using Polysilicon
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It may for example be polysilicon or amorphous silicon
The polysilicon layer is doped with boron
The transistor gates are formed in a polysilicon layer
Examples of using Layer
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A layer is displayed independently from other layers
The usage of second layer additional purchase
Every layer seems to beat to a different tune
