Examples of 'schottky diode' in a sentence
Meaning of "schottky diode"
schottky diode - A Schottky diode is a type of semiconductor diode with a low forward voltage drop and a fast switching action, commonly used in high-frequency and high-speed applications
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- A metal-semiconductor diode that exhibits a nonlinear voltage/current relationship
How to use "schottky diode" in a sentence
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schottky diode
Schottky diode with a vertical barrier.
Method for forming a schottky diode on a silicon carbide substrate.
Schottky diode display.
It is preferred that the reverse current preventive diode comprises a schottky diode.
The Schottky diode was modeled using surface impedance.
Another very common diode is the Schottky diode.
A Schottky diode behaviour has been observed and explained.
The cathode of this Schottky diode is coupled to ground.
The memory cell comprises a single Schottky diode.
Method of making Schottky diode with an improved voltage behavior.
Currently the most advance component is the Schottky diode.
The channel with a Schottky diode in series confers phase predistortion.
The present invention relates to the forming of a Schottky diode.
VD being the threshold voltage of the Schottky diode which forms a transistor gate.
This is due to the higher current density in the Schottky diode.
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A theoretical study demonstrates that the Schottky diode detector can not provide satisfactory characteristics.
A junction diode may be substituted for the Schottky diode.
Any suitable Schottky diode can be employed including those commercially available from On Semiconductor.
This is an advantage compared to the Schottky diode which has to be biased.
A schottky diode connected between terminals 2 and 3 does not affect the base wiring.
It is known that under these conditions a Schottky diode is obtained on GaAs.
Schottky diode comprising, in the following order between a lower surface and an upper surface,.
The present invention relates to the forming of a Schottky diode in silicon carbide.
Module of single Schottky diode or FRD, is used as a part of converters.
These areas extend to underlying collector layers such that a Schottky diode is formed.
It is often said that the Schottky diode is a " majority carrier " semiconductor device.
Characterization of the Schottky diode.
The Schottky diode of claim 3, wherein said fingers are separated in discontinuous fragments.
A simple rectena can be constructed from a Schottky diode placed between antenna dipoles.
These layers S can suitably be used to manufacture the Schottky diode.
Finally, a theoretical analysis on a diamond Schottky diode performances in a power converter is realized.
This depletion layer can also be made of a MOS or a Schottky diode.
In this case, the Schottky diode thus obtained should not leak.
According to another embodiment, the diode is a Schottky diode.
For these low-power signals, the Schottky diode arrangement operates as a capacitor.
To compare these two lasers, we have used a Schottky diode.
The Schottky diode of claim 5, wherein the first metallization comprises periodically repeated second islands.
By way of example, the compensating diode may be a Schottky diode.
A cathode of the third Schottky diode SD3 is grounded.
A source according to claim 2, wherein said compensating diode is a Schottky diode.
Development of on-wafer calibration methods and planar Schottky diode characterisation at THz frequencies.
The microwave power detector is in particular a microwave " contact " diode or a Schottky diode.
The cathode of this Schottky diode is coupled to the system BATT+ line.
On the other hand, it provides a structure integrating in monolithic fashion a thyristor and a Schottky diode.
Schottky Diode D2 protects against damage due to reverse polarity connection.
An electromagnetic wave detector according to claim 2, wherein the rectifying junction comprises a Schottky diode.
The Schottky diode arrangement is impedance-matched to the low-amplitude signals.
In accordance with the present invention, the nonlinear element is preferably a Schottky diode pair.
The Schottky diode of claim 5, wherein the end of said fingers is rounded.
It should be noted that transistor M4 may possibly be replaced with a Schottky diode.
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Schottky diodes are implemented because they
Method for forming a schottky diode on a silicon carbide substrate
Schottky diode with a vertical barrier
