Examples of 'schottky diodes' in a sentence

Meaning of "schottky diodes"

schottky diodes: Schottky diodes are a type of semiconductor diode known for their fast switching action and low forward voltage drop. They are commonly used in high-frequency and high-speed applications due to their superior performance compared to other diodes
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  • plural of Schottky diode

How to use "schottky diodes" in a sentence

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schottky diodes
Schottky diodes are implemented because they.
Schottky and oxidized Schottky diodes were studied.
Schottky diodes find application as rectifiers for high frequency signals.
Mixer test jig for characterisation of Schottky diodes.
Schottky diodes are significant components in the millimeter wave and terahertz frequency applications.
Mixer test jig for millimeter wave Schottky diodes.
Schottky diodes are often used as antisaturation clamps in Schottky transistors.
The third channel can also have two Schottky diodes connected in parallel.
Lateral Schottky diodes were built on one of the thick substrates.
This metallic layer will serve to constitute the gates of the Schottky diodes.
Schottky diodes Schottky diodes are constructed from a metal to semiconductor contact.
High and low states of conduction much faster than even Schottky diodes.
Schottky diodes are often used as antisaturation clamps on transistors a Schottky transistor.
Semiconductor devices including Schottky diodes with controlled breakdown and methods of fabricating same.
As a particular embodiment example, the diodes used are Schottky diodes.

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I have used high speed schottky diodes and the signal has been integrated with 2 uF capacitors.
The diodes may be Schottky diodes.
The four Schottky diodes are consequently satisfactorily polarized by the dc-voltage fed in at Ep.
A control element as thus described constitutes two Schottky diodes mounted in series and in opposition.
In this thesis, we focused the analysis on pseudo-vertical diamond Schottky diodes.
Alternatively, Schottky diodes may be used.
Most predistortion linearizers use non-linear elements such as Schottky diodes.
It is also known to use Schottky diodes or MOS-diodes as varactors.
According to an embodiment of the present invention, the rectifying elements are Schottky diodes.
Nevertheless, Schottky diodes meet some reluctance before the abundance of PiN Si diodes.
When low voltage drop is needed now, Schottky diodes are used.
In such applications, Schottky diodes or PN junction diodes are in particular used.
In comparison with the power p-n diodes the Schottky diodes are less rugged.
Preferably, Schottky diodes are utilized.
In this thesis a novel mixer-based characterisation method of discrete planar Schottky diodes is presented.
Moreover, silicon carbide based Schottky diodes do not suffer from switching losses.
A limiter circuit according to claim 1, wherein the said asymmetrical conductivity elements are Schottky diodes.
Among these power devices, diamond based Schottky diodes are the most advanced.
FIG . 2 shows such a temperature compensating circuit realized with the aid of Schottky diodes.
The diodes 8 are preferably Schottky diodes with low DC voltage.
No Schottky Diodes, External Schottky diodes are not compatible with reversing speed controls.
According to one embodiment, the second channel has two Schottky diodes connected in parallel.
Then, we studied the Schottky diodes in polymers of type metal / polymer / metal.
Electronic components employing rectifying junctions include p-n diodes, Schottky diodes and bipolar junction transistors.
The fabricated Schottky diodes show state-of-the-art intrinsic performance with cut-off frequencies nearby 1 THz.
Abstract, This thesis was focused on high power diamond Schottky diodes fabrication.
Diode module on basis of Schottky diodes and fast-recovery diodes FRD.
Modules of series М4Sch - diode assemblies based on Schottky diodes.
Single-phase rectifier bridge on basis of Schottky diodes or FRD, is intended for AC rectification.
Modules М5Sch - single-phase rectifier bridge based on Schottky diodes.
Non-linear elements other than the Schottky diodes of embodiment of FIG . 4 can be used.
The circuit of claim 1, wherein the rectifying elements are Schottky diodes.
Traditionally Schottky diodes are characterised by current-voltage, capacitance-voltage, and S-parameter measurements.
The photodiode is thus equivalent to two Schottky diodes head-to-tail.
The Schottky diodes having electrode E 1 as an anode are reverse-biased.

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