Examples of 'silicon oxide layer' in a sentence
Meaning of "silicon oxide layer"
Silicon oxide layer: a thin layer of silicon oxide that forms on the surface of silicon when exposed to oxygen
How to use "silicon oxide layer" in a sentence
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silicon oxide layer
It can also be produced with a silicon oxide layer.
A silicon oxide layer is then formed to encapsulate each island.
Removing the previously formed silicon oxide layer.
And a silicon oxide layer on the rest of the surface.
Packaging material comprising a silicon oxide layer and a polyolefin layer.
The silicon oxide layer is usually produced by thermal oxidation.
The buried oxide layer may conventionally be a silicon oxide layer.
The thin silicon oxide layer may optionally be nitrided as described above.
This device is based on a double trench etched in a thick silicon oxide layer.
The porous silicon oxide layer can be formed by sputtering or ion implantation.
There is obtained a silicon substrate with a structured upper silicon oxide layer.
The silicon oxide layer and aluminium oxide layer are particularly preferable.
This removal can be performed by chemical attack of the silicon oxide layer.
This silicon oxide layer serves to protect the polysilicon surface from nitrogen.
The oxygen concentration of the amorphous silicon oxide layer can be adjusted as desired.
See also
This silicon oxide layer should then be levelled by a mechanical chemical polishing stage.
The spacers are for example formed of a nitride layer and of a silicon oxide layer.
The film carrying the silicon oxide layer is known in the prior art.
The metal layer formed by gold aggregates is then deposited on the silicon oxide layer.
A transparent silicon oxide layer surrounding a cluster of fibroblasts is clearly evidenced in the micrograph.
The annular wall may also be formed of polysilicon covered with a silicon oxide layer.
This silicon oxide layer electrically insulates the substrate and electrolysis electrodes.
The present invention relates to a packaging material comprising a silicon oxide layer and a polyolefin layer.
Thus a thick silicon oxide layer is formed localized all about the active zone.
The upper layer of the Bragg mirror is a silicon oxide layer.
The silicon oxide layer 2 is then conventionally removed.
On the layer of raw SiGe, a silicon oxide layer is deposited.
A silicon oxide layer 7 is formed on layer 6 by thermal oxidation or by deposition.
On the protective layer, an upper silicon oxide layer is deposited.
Forming a silicon oxide layer on said strained silicon thin layer ;.
The air-filled cavity may be supported by a silicon oxide layer.
Forming a thin silicon oxide layer on the upper layer ;.
According to an embodiment of the present invention, the insulating layer is a silicon oxide layer.
A silicon oxide layer 4 is for example removed by means of a hydrofluoric acid solution.
Etching the silicon layer until the silicon oxide layer is reached, in order to define,.
Pure chemical etching achieved selectivity inferior than 1 nm / min on the silicon oxide layer.
Forming a first silicon oxide layer having a thickness smaller than 1 nm on a silicon substrate ;.
Applying a first photoresist mask to said silicon oxide layer to outline a fuse link line ;.
Applying a silicon oxide layer over said substrate surface and said integrated circuit device structures ;.
Removing the germanium layer, the first silicon oxide layer and the second layer.
But the smaller the particles, the more detrimental the presence of a native silicon oxide layer.
Forming a thin silicon oxide layer around the bridge and on the active area ;.
It avoids the production of low-energy anchoring under vacuum with a silicon oxide layer SiO 2.
A preferred barrier comprises a first silicon oxide layer, a silicon nitride layer, and a second silicon oxide layer.
Insulating layer 20 is for example a silicon oxide layer.
Depositing the second silicon oxide layer having the thickness eoxD within a margin of D * eoxD.
Preferably, the compensation capacitors include a sandwich formed by a silicon oxide layer and two silicon plates.
A single silicon oxide layer 44 is obtained in this way.
Deposition by CVD of a planarizing silicon oxide layer of the API type ;.
Next, the silicon oxide layer 2 is conventionally removed.
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