Examples of 'transistor gate' in a sentence
Meaning of "transistor gate"
transistor gate: In electronics, a transistor gate refers to the component of a transistor that controls the flow of electrical current between the source and drain terminals, playing a crucial role in the operation and functionality of the transistor as a semiconductor device
How to use "transistor gate" in a sentence
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transistor gate
Method for the making of a transistor gate.
Reduced transistor gate leakage.
Production of spacers at flanks of a transistor gate.
The formation of the transistor gate can be achieved in different ways.
They may for example be connected to a transistor gate.
Integrated circuit with a power transistor gate bias controlled by the leakage current.
Method for forming spacers for a transistor gate.
The transistor gate on the glass substrate ;.
Conductive zone of the memory transistor gate including.
In other words, the transistor gate is not self-aligned with the source and drain regions.
Compound semiconductor field effect transistor gate length scaling.
This memory transistor gate 7 comprises in particular,.
All these layers are etched in order to obtain a transistor gate pattern.
Producing the transistor gate on a glass substrate ;.
One embodiment of the invention is designed to shrink transistor gate length.
See also
In another example, a transistor gate has associated with it a capacitance.
VD being the threshold voltage of the Schottky diode which forms a transistor gate.
In this work critical process steps for NMOS transistor gate line width decrease are studied.
Signal S i then corresponds to the voltage applied to the transistor gate.
In another embodiment, a transistor gate has associated with it a capacitance.
A metallic deposit 7 constitutes the transistor gate.
Conductive area of the storage transistor gate 7 with a substantially triangular shape.
In specific bias conditions, charges are trapped in the transistor gate.
Formation of at least one transistor gate on the first semiconductor zone, then.
According to a first possible embodiment, the electrode is a transistor gate electrode.
Conductive zone 11 of the polysilicon memory transistor gate having an essentially rounded lateral face 15 ;.
The method according to claim 2, wherein the first block is a transistor gate pattern.
If the polarity reversal is transient, the transistor gate has no time to discharge.
In a first alternative embodiment, gate contact 9 presents a larger surface than the driver transistor gate head.
Metal-semiconductor fiel-effect transistor gate voltage.
Capacitors of the MOS type, the capacitor is created around a transistor gate.
In FIG . 4 a, the voltage Vd applied to the transistor gate is zero.
Forming, in the space left free by the sacrificial gate, an insulated MOS transistor gate.
This pattern 200 is for example a transistor gate stack.
The above description has referred to a monolithic structure in which the transistor gate 59 was buried.
They constitute the spacers 150 of the transistor gate.
Layers 62 and 64 will also be used for producing the shunt resistor of the transistor gate 34a.
Insulating spacer 132 extending over the entire lateral flank ( on the memory transistor gate side ).
FIGS . 4A-4D show different alternative arrangements of the photosensitive cell transistor gate electrodes ;.
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