Examples of 'transistor having' in a sentence
Meaning of "transistor having"
transistor having - This phrase may refer to a transistor that possesses certain characteristics or features
How to use "transistor having" in a sentence
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transistor having
A tetrode transistor is any transistor having four active terminals.
A transistor having a structure of this type has already been made.
Method for the manufacture of a transistor having differentiated access regions.
A transistor having a substrate that comprises the bulk single crystal according to any preceding claim.
This permits obtaining a transistor having an improved current amplification.
Dynamic memory cell provided with a field-effect transistor having zero swing.
An organic transistor having a thin film of OFET type was manufactured.
The invention is nevertheless not limited to a vertical bipolar transistor having an epitaxial emitter.
Point-contact transistor having two emitters.
Alternatively, one of the electronic components comprises a double-gate transistor having two gates.
A preferred embodiment utilizes a transistor having a gate which is situated at a binding site.
Transistor having a drain connected to the control output terminal and a source connected to ground ; and.
This resistance may be replaced by a transistor having its gate and source interconnected.
Fig . 3 is a schematic cross-sectional view of a further bipolar transistor having a plug.
The switch may correspond to a MOS transistor having its gate controlled by the binary signal.
See also
In some examples, the sensor comprises a field-effect transistor having a gate.
Tr is preferably a P channel transistor having its gate connected to its drain.
Integrated circuit fabrication process for forming a bipolar transistor having extrinsic base regions.
The circuit comprises a first transistor having a control terminal, a current input terminal and a current output terminal.
HFET is to be taken to mean a field effect transistor having a heterostructure.
Measurement MOS transistor having a gate connected to the photodiode cathode ; and.
The second type of device comprises a MOS transistor having two gates.
A field-effect transistor having a low threshold voltage and determined hereinafter by the abbreviation LTT ;.
Process for the production of a thin film transistor having a double gate and an optical mask.
Q4 is an N channel transistor having its source connected to the current source T5.
Integrated semiconductor device with an insulated-gate field effect transistor having a negative transconductance zone.
Comprises the PNP transistor having its emitter connected to the V+ rail.
The transistor T1 could however be a field effect transistor having an insulated gate.
A first transistor having a gate;.
Method according to claim 23, wherein the resistor is a p-channel transistor having a grounded gate.
A point-contact transistor having three emitters.
Fig . 3 shows a further bipolar SOL transistor having a plug.
Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor.
The fourth amplification transistor is a P-MOS transistor having a channel width of 20 um.
Transistor 10 is a phase-shifting transistor having an emitter resistance equal to its collector resistance.
The circuit comprises a single bipolar transistor having an emitter, a base and a collector.
Advantageously, each switch is a transistor having a gate, a base or a trigger as the control input.
This object is achieved with a field effect transistor having the features of present claim 1.
Process for obtaining a transistor having a silicon-germanium gate.
FIG . 4, The various stages of producing a MESFET transistor having a buried semiconductor layer.
S2 comprises the NPN transistor having its emitter connected to the V - rail.
Transistor 321, connected to node VDD, is a reset transistor having its gate connected to node RST.
FIG . 3a illustrates an embodiment of a MOS transistor having a drain extension that corresponds to a resistor.
This invention relates to a field-effect transistor having structured, raised source and drain regions.
Component 10 is a simple depleted MOS transistor having its gate connected to its source.
The first dual-gate MOS transistor is a transistor having a negative threshold voltage variation ; and.
FIG . 5 shows a bipolar pnp-type transistor having a vertical configuration.
T ' 4 is an N channel transistor having its source connected to T5.
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It only indicates if the transistor is operating or not
Examples of using Having
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I am not accustomed to having contractors dictate terms
But having my own business has prevented me
Thank you for having me for so long
