Examples of 'ohmic contact' in a sentence
Meaning of "ohmic contact"
In physics and electrical engineering, ohmic contact refers to the electrical connection established between a conductor and a semiconductor material, which allows current to flow without significant resistance
How to use "ohmic contact" in a sentence
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ohmic contact
To enable ohmic contact to be obtained with a metal.
Bus bars must make ohmic contact.
So as to ensure an ohmic contact materials of compatible work functions should be used.
This type of contact is called an ohmic contact.
They form then an ohmic contact with the electron accumulation layer.
The control voltage is applied to the ohmic contact.
Embodiments of the novel ohmic contact have shown substantial improvements in stability over known contacts.
It is also possible that an ohmic contact is formed.
Producing an ohmic contact layer on a face of a transparent substrate ;.
This layer provides only the ohmic contact function.
An ohmic contact 9 is formed on the substrate.
The gate deposited should form an ohmic contact to the diffusion region.
The decal is then processed to remove organic matter and form an ohmic contact.
For dopant activation, ohmic contact formation or.
First the characterization in forward and reverse mode is done before the ohmic contact annealing.
See also
Depositing an ohmic contact in the active zone ;.
Method of sealing two plates with the formation of an ohmic contact therebetween.
Deposition of an ohmic contact on the underside of the substrate ;.
The contacts typically consist of a metallic pattern in ohmic contact with the device.
In addition, an ohmic contact is provided on the zones n and p.
Preferably the transducer comprises a contact layer provided to facilitate ohmic contact to the photodiode.
After ohmic contact annealing, the contact resistance is lower.
The treatment of the substrate surface for ohmic contact is performed by a laser.
Ohmic contact characteristic was favorable, but the electrode height was insufficient.
Deposition of a second ohmic contact on the underside of the substrate ;.
The n++ conductivity permits of obtaining a small contact resistance between the ohmic contact and the photodiode.
Deposition of an ohmic contact on the upper layer of said structure ;.
The transistor of claim 1 wherein the base ohmic contact is produced in AuMn.
The ohmic contact 41 may be formed by evaporation in vacuo and photoengraving process.
With this technique, the ohmic contact presents high resistivity.
Second ohmic contact layer, transparent to the wavelengths to be detected, is then produced.
The transistor of claim 1 wherein the base ohmic contact is a diffusing contact.
Also the ohmic contact 4 is produced in accordance with the method according to the invention.
The metallizations 16 by which the control voltage Vcomm is supplied is an ohmic contact.
A second transparent ohmic contact layer 4 is on this stack of layers.
A sintering step permits then forming the ohmic contact C2.
Deposition of a first ohmic contact on the upper layer of said structure ;.
The function of coating 14 is to ensure a better ohmic contact.
Producing a second ohmic contact layer on the first stack of layers ;.
The source electrode is obtained in the form of an ohmic contact 16.
The n+ semiconductors provide an ohmic contact between the intrinsic semiconductor and the conducting layers.
A portion of unbalanced charge carriers will flow to ohmic contact 13.
Ensure a good ohmic contact with the electric contacts, and thus have a high doping level ;.
The upper face of the layer 8 is provided with an ohmic contact layer 9.
Unmarked type N+ zones ensure the ohmic contact with the source and drain electrodes.
An ohmic contact 11 is formed on thin film 9 having the structure described above.
Electrodes 2 and 3 form an ohmic contact with the semiconductor material.
To do this, the assembly of layers is etched to the first ohmic contact layer 5.
A method of producing an ohmic contact to a p-type a-SiC layer in a semiconductor device, comprising.
Indeed, it is enough for this layer to exhibit a good ohmic contact with metal core 15.
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